Trade-off between Gradual Set and On/Off Ratio in HfO(x)-Based Analog Memory with a Thin SiO(x) Barrier Layer.
Trade-off between Gradual Set and On/Off Ratio in HfO(x)-Based Analog Memory with a Thin SiO(x) Barrier Layer.
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DOI：
10.1021/acsaelm.3c00131
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发表时间：
2023-06-27
影响因子：
4.7
通讯作者：
Vogel, Eric M.
中科院分区：
文献类型：
--
作者：
Athena, Fabia F.;West, Matthew P.;Hah, Jinho;Graham, Samuel;Vogel, Eric M.
基于HfOx的突触被广泛接受为内存和神经形态计算的可行候选者。氧空位的运动引起氧化物基突触的电阻变化。HfOx为基础的突触通常表现出一个突然的非线性电阻变化下的正偏置应用（设置），限制了它们的生存能力作为模拟存储器。在这项工作中，AlOx或SiOx的薄阻挡层被添加到底部电极/氧化物界面以减缓氧空位的迁移。电学结果表明，在设定期间，HfOx/SiOx器件中的电阻变化比HfOx器件更可控。虽然HfOx/SiOx器件的开/关比仍然很大（0.110），但它被示出为小于HfOx/AlOx和HfOx器件的开/关比。有限元建模表明，在HfOx/SiOx器件中，在复位期间较慢的氧空位迁移导致导电细丝中较窄的断裂区域。较窄的破裂区域导致较低的高电阻状态，并且因此导致HfOx/SiOx器件的较小的开/关比。总的来说，结果表明，减缓阻挡层器件中氧空位的运动改善了设置期间的电阻变化，但降低了开/关比。
HfOx-based synapses are widely accepted as a viable candidate for both in-memory and neuromorphic computing. Resistance change in oxide-based synapses is caused by the motion of oxygen vacancies. HfOx-based synapses typically demonstrate an abrupt nonlinear resistance change under positive bias application (set), limiting their viability as analog memory. In this work, a thin barrier layer of AlOx or SiOx is added to the bottom electrode/oxide interface to slow the migration of oxygen vacancies. Electrical results show that the resistance change in HfOx/SiOx devices is more controlled than the HfOx devices during the set. While the on/off ratio for the HfOx/SiOx devices is still large (∼10), it is shown to be smaller than that of HfOx/AlOx and HfOx devices. Finite element modeling suggests that the slower oxygen vacancy migration in HfOx/SiOx devices during reset results in a narrower rupture region in the conductive filament. The narrower rupture region causes a lower high resistance state and, thus, a smaller on/off ratio for the HfOx/SiOx devices. Overall, the results show that slowing the motion of oxygen vacancies in the barrier layer devices improves the resistance change during the set but lowers the on/off ratio.
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