Influence of growth conditions on the quality of strained InAlGaAs/AlGaAs quantum wells grown by MOCVD
Influence of growth conditions on the quality of strained InAlGaAs/AlGaAs quantum wells grown by MOCVD
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生长条件对MOCVD生长应变InAlGaAs/AlGaAs量子阱质量的影响
DOI：
10.1007/s00339-019-2411-5
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发表时间：
2019-01
影响因子：
2.7
通讯作者：
Dong Jianrong
中科院分区：
文献类型：
--
作者：
Zhao Yongming;Huang Jie;Sun Yurun;Yu Shuzhen;Li Kuilong;Dong Jianrong
采用金属有机化学气相沉积（MOCVD）方法在GaAs衬底上生长了压应变InAlGaAs量子威尔斯阱（QW）。利用高分辨X射线衍射（HR-XRD）、光致发光（PL）和原子力显微镜（AFM）研究了反应器压力、V/III比、生长温度和衬底取向对InAlGaAs量子阱质量的影响。光致发光的结果表明，量子阱的光致发光强度和半高宽（FWHM）是非常敏感的生长条件，如反应器的压力，生长温度，和衬底取向。AFM结果表明，外延层的生长方式主要受衬底取向的影响。在0.5°斜切和2°斜切衬底上生长的样品分别为台阶流和台阶聚束生长。在相同的生长条件下，与在2°斜切衬底上生长的样品相比，在0.5°斜切衬底上生长的样品具有更高的PL强度。在700 °C和50 mbar的压力下生长的样品的PL和AFM结果表明，这些生长参数接近InAlGaAs量子阱的最佳生长条件。
Compressive-strained InAlGaAs quantum wells (QWs) were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD). The influences of reactor pressure, V/III ratio, growth temperature, and substrate orientation on the quality of InAlGaAs QWs were studied using high resolution X-ray diffraction (HR-XRD), photoluminescence (PL) and atomic force microscope (AFM) measurements. The PL results indicate that the PL intensity and full width at the half-maximum (FWHM) of QWs are very sensitive to the growth conditions such as reactor pressure, growth temperature, and substrate orientation. The AFM results demonstrate that the growth mode of epilayer is dominated by the orientation of substrate. The growth mode of samples grown on 0.5° miscut and 2° miscut substrates is step flow and step bunching, respectively. The samples grown on 0.5° miscut substrates have higher PL intensity comparison with the samples grown on 2° miscut substrates at the same growth conditions. The PL and AFM results of sample grown at 700 °C and a pressure of 50 mbar with a V/III ratio of 100 indicated that these growth parameters are close to the optimum growth conditions for InAlGaAs QWs.
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