Effect of OH(-) on chemical mechanical polishing of β-Ga(2)O(3) (100) substrate using an alkaline slurry.
Effect of OH(-) on chemical mechanical polishing of β-Ga(2)O(3) (100) substrate using an alkaline slurry.
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OH-对碱性浆料对β-Ga2O3(100)基板化学机械抛光的影响
DOI：
10.1039/c7ra11570a
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发表时间：
2018-02-06
期刊：
影响因子：
3.9
通讯作者：
Tao, Xutang
中科院分区：
文献类型：
--
作者：
Huang, Chuanjin;Mu, Wenxiang;Zhou, Hai;Zhu, Yongwei;Xu, Xiaoming;Jia, Zhitai;Zheng, Lei;Tao, Xutang
β-Ga2O3是一种半导体材料，由于其在高性能场效应晶体管等高功率器件中的潜在应用而引起了广泛的关注。几十年来，β-Ga2O3 一直通过化学机械抛光 (CMP) 进行加工。然而，对于 OH− 对使用碱性浆料通过 CMP 处理的 β-Ga2O3 的影响的理解仍然有限。在本研究中，β-Ga2O3 衬底依次进行机械抛光（MP）、CMP 和蚀刻。然后，为了研究样品表面发生的变化，通过原子力显微镜（AFM）、三维激光扫描共焦显微镜（LSCM）、扫描电子显微镜（SEM）和X射线光电子能谱（XPS）对样品进行表征。 LSCM 和 SEM 结果表明，β-Ga2O3 在 MP 过程中极易发生脆性断裂。 AFM 显示，通过 CMP 可获得 Ra 约为 0.18 nm 的超光滑且无损伤的表面。 XPS结果表明，通过化学反应在β-Ga2O3表面形成了主要含有可溶性镓盐(Ga(OH)4−)的变质层。化学刻蚀后β-Ga2O3表面出现了树枝状图案。这一现象表明β-Ga2O3表面的化学反应以不均匀且选择性的方式发生。这项研究的结果将有助于浆料制备和 CMP 的优化。 β-Ga2O3是一种半导体材料，由于其在高性能场效应晶体管等高功率器件中的潜在应用而引起了广泛的关注。
β-Ga2O3, a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors. For decades, β-Ga2O3 has been processed through chemical mechanical polishing (CMP). Nevertheless, the understanding of the effect of OH− on β-Ga2O3 processed through CMP with an alkaline slurry remains limited. In this study, β-Ga2O3 substrates were successively subjected to mechanical polishing (MP), CMP and etching. Then, to investigate the changes that occurred on the surfaces of the samples, samples were characterised through atomic force microscopy (AFM), three-dimensional laser scanning confocal microscopy (LSCM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). LSCM and SEM results showed that β-Ga2O3 is highly vulnerable to brittle fracture during MP. AFM revealed that an ultrasmooth and nondamaged surface with a low Ra of approximately 0.18 nm could be obtained through CMP. XPS results indicated that a metamorphic layer, which mainly contains soluble gallium salt (Ga(OH)4−), formed on the β-Ga2O3 surface through a chemical reaction. A dendritic pattern appeared on the surface of β-Ga2O3 after chemical etching. This phenomenon indicated that the chemical reaction on the β-Ga2O3 surface occurred in a nonuniform and selective manner. The results of this study will aid the optimization of slurry preparation and CMP. β-Ga2O3, a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors.
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影响因子：
4
作者：
Higashiwaki, Masataka;Sasaki, Kohei;Yamakoshi, Shigenobu
通讯作者：
Yamakoshi, Shigenobu
影响因子：
1.9
作者：
Serykh, Alexander I.;Amiridis, Michael D.
通讯作者：
Amiridis, Michael D.
影响因子：
4
作者：
Higashiwaki, Masataka;Sasaki, Kohei;Yamakoshi, Shigenobu
通讯作者：
Yamakoshi, Shigenobu
影响因子：
1.5
作者：
Hanada, Kenji;Moribayashi, Tomoya;Kasu, Makoto
通讯作者：
Kasu, Makoto
影响因子：
2.2
作者：
Matovu, J. B.;Ong, P.;Babu, S. V.
通讯作者：
Babu, S. V.