Smoothing CVD Diamond Films by Wire EDM with High Travelling Speed
Smoothing CVD Diamond Films by Wire EDM with High Travelling Speed
复制标题
高行进速度线切割平整 CVD 金刚石薄膜
DOI：
10.4028/www.scientific.net/kem.257-258.489
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发表时间：
2004-01
期刊：
影响因子：
--
通讯作者：
C.Y.Wang
中科院分区：
文献类型：
--
作者：
Z.N.Guo;Z.G.Huang;C.Y.Wang
提出了一种高速走丝电火花加工CVD金刚石膜的技术，该技术可有效地实现CVD金刚石膜的光滑化。CVD金刚石膜预先涂覆有导电材料的薄层，然后线电极以高行进速度在涂覆的表面上移动。结果，金刚石膜表面上的峰被快速地去除。在机械加工中，金刚石的石墨化使放电过程得以继续。采用有限元法对涂层材料进行了分析。通过单脉冲放电实验验证了有限元分析的理论结果。结果表明，涂层材料对CVD金刚石膜的去除行为有明显的影响。CVD金刚石薄膜的艾德电火花加工过程与普通金属材料的加工过程相比具有很大的不同。讨论了CVD金刚石膜的去除机理。使用不同的加工参数进行抛光实验。
A technique of processing CVD diamond films by wire EDM with high traveling speed (WEDM-HS) has been developed, with which the smoothing of CVD diamond films can be efficiently achieved. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then the wire electrode moves across the coated surface with high traveling speed. As a result, peaks on the surface of the diamond film are removed rapidly. In machining, graphitization of diamond enables the electro-discharge process to continue. The finite element method is employed to analyze the coating material. An experiment for the single pulse discharge was made to test the theoretical results from the FEM. It is shown that the material of the coated layer can evidently affect the removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of ED machining of CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed. A polishing experiment was performed using different machining parameters.
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影响因子：
5.4
作者：
M. Yoshikawa;F. Okuzumi
通讯作者：
M. Yoshikawa;F. Okuzumi
DOI：
10.1016/0168-583x(95)01007-6
发表时间：
1996-05
影响因子：
1.3
作者：
A. Yoshida;M. Deguchi;M. Kitabatake;T. Hirao;J. Matsuo;N. Toyoda;I. Yamada
通讯作者：
A. Yoshida;M. Deguchi;M. Kitabatake;T. Hirao;J. Matsuo;N. Toyoda;I. Yamada
影响因子：
1.9
作者：
B. Bovard;T. Zhao;H. Macleod
通讯作者：
B. Bovard;T. Zhao;H. Macleod
影响因子：
2.1
作者：
Si-Kyung Choi;D. Jung;S. Kweon;S. Jung
通讯作者：
Si-Kyung Choi;D. Jung;S. Kweon;S. Jung