Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process
Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process
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通过两步工艺实现宽带隙 SnO2 的 p 型导电性
DOI：
10.1063/5.0045663
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发表时间：
2021-03
影响因子：
4
通讯作者：
He Yunbin
中科院分区：
文献类型：
--
作者：
Fu Wang;Li Mingkai;Li Jiashuai;Fang Guojia;Ye Pan;E Wentao;Xiao Xinglin;Wei Haoran;Liu Bohan;Lu Yinmei;He Yunbin
由于本征缺陷，宽带隙SnO 2通常显示n型导电性。在这里，我们证明了实现的p型导电的SnO 2与两个步骤的过程中，其中3.3 at.采用脉冲激光沉积法在c-Al_2 O_3衬底上生长了掺Mg ~（2+）的SnO_2外延薄膜，并在氧气气氛中进行了适当温度和时间的退火。由温度依赖性电阻测量揭示的激活能约为85毫电子伏验证镁作为浅受主在p型掺杂的氧化锡。在适当的温度和时间的后退火处理被认为是至关重要的，大大提高了p型导电性的Mg-SnO 2通过去除间隙Mg，同时保持在SnO 2晶格中的替代Mg。通过霍尔效应测量，在600 °C和0.5 h的优化条件下退火的样品实现了1.43 × 1017 cm-3的空穴浓度和4 cm 2 V-1 s-1的空穴迁移率。高质量p型Mg-SnO 2外延薄膜的获得为基于SnO 2 p-n结的先进光电器件的开发展示了巨大的潜力。
Wide bandgap SnO2 usually shows n-type conductivity due to intrinsic defects. Herein, we demonstrate the achievement of p-type conduction in SnO2 with a two-step process, in which 3.3 at. % Mg-doped SnO2 epitaxial films were first grown on c-Al2O3 by pulsed laser deposition and then annealed in an oxygen atmosphere at proper temperature and time. An activation energy of around 85 meV revealed by temperature-dependent resistance measurements verifies Mg as a shallow acceptor in the p-type doping of SnO2. The post-annealing treatment at suitable temperature and time was found to be crucial to greatly enhance the p-type conductivity of Mg-SnO2 by removing the interstitial Mg while maintaining the substitutional Mg in the SnO2 lattice. A hole concentration of 1.43 × 1017 cm−3 and a hole mobility of 4 cm2 V−1 s−1 as determined by Hall-effect measurements were achieved for a sample annealed at optimized conditions of 600 °C and 0.5 h. The achievement of high-quality p-type Mg-SnO2 epitaxial films demonstrates high potential in developing advanced optoelectronic devices based on p-n junctions of SnO2.
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影响因子：
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作者：
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通讯作者：
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影响因子：
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影响因子：
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作者：
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影响因子：
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