Effect of gamma irradiation on (K,Na,Li)(Ta,Nb)O3–CaZrO3 lead-free ferroelectric film grown on La0.67Ba0.33MnO3 and La0.67Ca0.33MnO3 conductive oxide electrode
Effect of gamma irradiation on (K,Na,Li)(Ta,Nb)O3–CaZrO3 lead-free ferroelectric film grown on La0.67Ba0.33MnO3 and La0.67Ca0.33MnO3 conductive oxide electrode
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γ辐照对La0.67Ba0.33MnO3和La0.67Ca0.33MnO3导电氧化物电极上生长的(K,Na,Li)(Ta,Nb)O3-CaZrO3无铅铁电薄膜的影响
DOI：
10.1016/j.jallcom.2019.152148
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发表时间：
2020-06
影响因子：
6.2
通讯作者：
Bao Jingfu
中科院分区：
文献类型：
--
作者：
Qin Feng;Sun Xiangyu;Gong Dongdong;Wang Yicheng;Chen Yu;Xu Liqiang;Chen Feng;Du Yijia;Bao Jingfu
（K1-xNax）NbO 3（KNN）基无铅铁电材料具有较大的压电系数，被认为是替代传统铅基铁电材料的最有希望的材料。材料的耐辐照性对于在强辐照环境中的应用，特别是在耐辐照器件中的可能应用是重要的。本文以La0.67Ca0.33MnO3（LCMO）和La0.67Ba0.33MnO3（LBMO）导电氧化物为底电极，金属Pt为顶电极，在SrTiO 3（001）衬底上生长了0.95（K0.49Na0.49Li0.02）（Ta0.2Nb0.8）O3-0.05CaZrO3（KNN-LT-CZ）无铅薄膜。Pt/KNN-LT-CZ/LCMO和Pt/KNN-LT-CZ/LBMO薄膜在50 Mrad（Si）γ射线辐照前后的剩余极化衰减分别高达21%和26%。辐照后，后者的介电常数仅下降了10%，而前者的介电常数却下降了10%。在导电金属氧化物上生长的KNN-LT-CZ膜具有良好的耐辐照性，这最终将有利于在更坚韧的环境中应用的器件的未来设计优化。
(K1-xNax)NbO3(KNN)-based lead-free ferroelectric materials featured with the large piezoelectric coefficient, has long been considered as a very promising candidate to replace traditional lead-based ferroelectric materials. Irradiation resistance of materials is important for the application in strong irradiation environments, especially possible application in irradiation resistance devices. In this paper, 0.95(K0.49Na0.49Li0.02)(Ta0.2Nb0.8)O3-0.05CaZrO3(KNN-LT-CZ) lead-free thin films have been grown on SrTiO3(001) substrates with La0.67Ca0.33MnO3(LCMO) and La0.67Ba0.33MnO3(LBMO) conductive oxide as bottom electrodes and metallic Pt as top ones. As large as 21% and 26% remnant polarization decay are distinguished in Pt/KNN-LT-CZ/LCMO and Pt/KNN-LT-CZ/LBMO films respectively, before and after gamma ray irradiation of 50 Mrad(Si). The irradiation even induced exotic current behavior in the latter ones, while the former ones exhibit only 10% decrease of the dielectric constant. The KNN-LT-CZ film grown on conductive metal oxides is associated with favorable irradiation resistance which would eventually benefit future design optimization in devices applied in more tough environments.
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DOI：
10.1016/j.nimb.2010.12.066
发表时间：
2011-02
影响因子：
1.3
作者：
Q. Shi;Ying Ma;Yushu Li;Yichun Zhou
通讯作者：
Q. Shi;Ying Ma;Yushu Li;Yichun Zhou
影响因子：
1.9
作者：
C. Arutt;M. Alles;W. Liao;H. Gong;J. Davidson;peixiong zhao;R. Reed;R. Weller;K. Bolotin;R. Nicholl;T. Pham;A. Zettl;Du Qingyang;Juejun Hu;Mo Li;B. Alphenaar;Ji-Tzuoh Lin;Pranoy Deb Shurva;S. Mcnamara;K. Walsh;P. Feng;L. Hutin;T. Ernst;B. Homeijer;R. Polcawich;R. Proie;Jacob L. Jones;E. Glaser;C. Cress;N. Bassiri‐Gharb
通讯作者：
C. Arutt;M. Alles;W. Liao;H. Gong;J. Davidson;peixiong zhao;R. Reed;R. Weller;K. Bolotin;R. Nicholl;T. Pham;A. Zettl;Du Qingyang;Juejun Hu;Mo Li;B. Alphenaar;Ji-Tzuoh Lin;Pranoy Deb Shurva;S. Mcnamara;K. Walsh;P. Feng;L. Hutin;T. Ernst;B. Homeijer;R. Polcawich;R. Proie;Jacob L. Jones;E. Glaser;C. Cress;N. Bassiri‐Gharb
影响因子：
1.8
作者：
K. Holbert;S. Sankaranarayanan;S. McCready
通讯作者：
K. Holbert;S. Sankaranarayanan;S. McCready
影响因子：
1
作者：
Jianxia Gao;Lirong Zheng;Zhitang Song;Chenglu Lin;De-zhang Zhu
通讯作者：
Jianxia Gao;Lirong Zheng;Zhitang Song;Chenglu Lin;De-zhang Zhu
影响因子：
0.7
作者：
C. Brennan
通讯作者：
C. Brennan