Electrical and optical properties dependence on evolution of roughness and thickness of Ga:ZnO films on rough quartz substrates
Electrical and optical properties dependence on evolution of roughness and thickness of Ga:ZnO films on rough quartz substrates
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粗糙石英基板上 Ga:ZnO 薄膜的电学和光学特性取决于粗糙度和厚度的演变
DOI：
10.1016/j.surfcoat.2010.12.029
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发表时间：
2011-02
影响因子：
5.4
通讯作者：
Yuan, Yu-zhen
中科院分区：
文献类型：
--
作者：
Liu, Yun-yan;Yang, Shan-ying;Wei, Gong-xiang;Song, Hong-sheng;Cheng, Chuan-fu;Xue, Chen-shan;Yuan, Yu-zhen
本文研究了用激光沉积系统在石英衬底上沉积GZO薄膜。XRD和AFM结果以及高度-高度相关函数H （r, t）及其参数w(t)和ξ(t)的计算表明，薄膜的生长可以分为两个阶段，而这两个阶段的转折点是薄膜呈现分形特征的时刻。描述了厚度和形貌粗糙度变化对这两个阶段的电阻率和光透过率的影响。研究发现，在第一阶段，电阻率主要取决于薄膜厚度，而在第二阶段，薄膜具有自仿射分形特征。形貌粗糙度的演化对电阻率有重要影响。透射率随膜厚的增加而减小，且对表面粗糙度的变化较为敏感。在200nm厚的薄膜上沉积10min，获得的电阻率最低为4.85×10−4Ωcm，平均透过率为85%。
The paper studies GZO films deposited on quartz substrates by a laser deposition system. The XRD and AFM results as well as the calculation of height–height correlation function H (r, t) and its parameters w(t) and ξ(t) reveal that the film growth can be divided into two stages, and that the turning point of these two stages is the time when the film exhibits fractal characteristics. The influence of thickness and morphology roughness evolution on the electrical resistivity and optical transmittance in these two stages are described. It is found that the electrical resistivity mainly depends on the film thickness in the first stage, while in the following stage, the film possess self-affine fractal characteristics. The morphology roughness evolution plays an important role in the resistivity. The transmittance is found to decrease with the increase of film thickness in the two stages and it is also found to be sensitive to the evolution of surface roughness. The lowest resistivity obtained is 4.85×10−4Ωcm with an average optical transmittance of 85% in the 200nm thick film deposited for 10min.
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影响因子：
2.4
作者：
S. Shin;Kyu-Ung Sim;J. Moon;J. H. Kim
通讯作者：
S. Shin;Kyu-Ung Sim;J. Moon;J. H. Kim
影响因子：
1.9
作者：
C. Guillén;J. Herrero
通讯作者：
C. Guillén;J. Herrero
影响因子：
8.4
作者：
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon
通讯作者：
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon
DOI：
10.1007/978-3-662-04141-3
发表时间：
2000
期刊：
--
影响因子：
--
作者：
R. Street
通讯作者：
R. Street
影响因子：
6.9
作者：
C. Lee;K. Lim;Jinsoo Song
通讯作者：
C. Lee;K. Lim;Jinsoo Song