Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation
Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation
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Al0.85Ga0.15As0.56Sb0.44 雪崩光电二极管，具有高抗温度波动能力
DOI：
10.1117/12.2326847
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Ng J
中科院分区：
文献类型：
--
作者：
Ng J
大多数宽带隙半导体材料中的雪崩增益和击穿电压取决于温度，并且使用APD的大多数仪器依赖于温度稳定或电压补偿电路来维持恒定的雪崩增益。通过在雪崩增益和击穿电压中引入具有固有的上级温度稳定性的材料，可以降低操作电路的复杂性。在现有技术的APD中，雪崩击穿电压的温度依赖性通过雪崩击穿的温度系数Cbd来量化。我们报告的时间和温度稳定性的雪崩增益和击穿电压的100 nm厚的雪崩层的Al 0.85Ga 0.15As 0.56Sb 0.44（AlGaAsSb）。对于类似的雪崩层厚度，Cbd（1.60 mV/K）小于现有技术的InP和InAlAs APD。在294 ~ 353 K温度范围内，对AlGaAsSb APD雪崩增益的时间稳定性进行了研究。在室温增益为10时，APD在294 K时的最大波动为±0.7%，当温度升高到353 K时，最大波动为±1.33%。有前途的增益的温度稳定性表明，在实现更高的容忍度的温度波动和降低电路的操作复杂性的AlGaAsSb晶格匹配的InP的潜力。暗电流是鲁棒的，并且在升高的温度下进行增益测量后没有显示出显著的热退化。
Avalanche gain and breakdown voltage in most wide bandgap semiconductor materials are dependent on temperature and most instruments utilizing APDs rely on temperature stabilization or voltage compensation circuitry to maintain a constant avalanche gain. The complexity in operation circuitry can be reduced by incorporating material with inherently superior temperature stability in its avalanche gain and breakdown voltage. In state of the art APDs, the temperature dependence of avalanche breakdown voltage is quantified by the temperature coefficient of avalanche breakdown, Cbd. We report on the temporal and temperature stability of avalanche gain and breakdown voltage of 100 nm thick avalanche layers of Al0.85Ga0.15As0.56Sb0.44(AlGaAsSb). The Cbd(1.60 mV/K) is smaller compared to state of art InP and InAlAs APDs for similar avalanche layer thickness. The temporal stability of avalanche gain for the AlGaAsSb APD was also evaluated in temperature ranges of 294 K to 353 K. The APD was biased at room temperature gain of 10 and maximum fluctuation of ±0.7% was recorded at 294 K which increases to ±1.33% when the temperature was increased to 353K. The promising temperature stability of gain indicates the potential of AlGaAsSb lattice matched to InP in achieving higher tolerance to temperature fluctuations and reduction of the operational complexity of circuitry. The dark currents are robust and do not show significant thermal degradation after gain measurements at elevated temperatures.
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影响因子：
2.5
作者：
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DOI：
--
发表时间：
1989
期刊：
影响因子：
--
作者：
S. Miura;T. Mikawa;H. Kuwatsuka;N. Yasuoka;T. Tanahashi;O. Wada
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影响因子：
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