Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films
Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films
复制标题
Bi2SiO5掺杂浓度对SrBi2Ta2O9薄膜电性能的影响
DOI：
10.1007/s11664-014-3258-3
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发表时间：
2014-06
影响因子：
2.1
通讯作者：
Ishiwara, Hiroshi
中科院分区：
文献类型：
--
作者：
Gao, Xingsen;Lu, Xubing;Liu, J. -M.;Ishiwara, Hiroshi
本文研究了化学溶液沉积法制备的Bi2SiO5(BSO)掺杂的SrBi2Ta2O9(SBT)薄膜的微结构和电学性能。X射线衍射观察表明，所有掺杂BSO的SBT薄膜的晶体结构与纯SBT薄膜的晶体结构基本相同。掺杂BSO后，薄膜的2PR和2eC值由纯SbT的15.3kVC/cm~2和138kV/cm变为10wt%BSO掺杂的1.45nμC/cm2和74kV/cm。SBT在1 MHz处的介电常数从纯SBT的199到掺杂10%BSO的SBT的96。掺杂的SBT薄膜比未掺杂的SBT薄膜具有更高的漏电流。尽管如此，所有掺杂的SBT薄膜仍然具有较小的介电损耗和较低的漏电流。我们的工作将为研究BSO掺杂对SBT薄膜的影响提供有益的见解，也将有助于未来非易失性铁电存储器的材料设计。
In this paper, we investigated the microstructure and electrical properties of Bi2SiO5 (BSO) doped SrBi2Ta2O9 (SBT) films deposited by chemical solution deposition. X-ray diffraction observation indicated that the crystalline structures of all the BSO-doped SBT films are nearly the same as those of a pure SBT film. Through BSO doping, the 2Pr and 2Ec values of SBT films were changed from 15.3 μC/cm2 and 138 kV/cm of pure SBT to 1.45 μC/cm2 and 74 kV/cm of 10 wt.% BSO-doped SBT. The dielectric constant at 1 MHz for SBT varied from 199 of pure SBT to 96 of 10 wt.% BSO-doped SBT. The doped SBT films exhibited higher leakage current than that of non-doped SBT films. Nevertheless, all the doped SBT films still had small dielectric loss and low leakage current. Our present work will provide useful insights into the BSO doping effects to the SBT films, and it will be helpful for the material design in the future nonvolatile ferroelectric memories.
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影响因子：
3.2
作者：
Xubing Lu;H. Ishiwara
通讯作者：
Xubing Lu;H. Ishiwara
影响因子：
0.7
作者：
A. Hartmann;R. Lamb;J. Scott;C. Gutleben
通讯作者：
A. Hartmann;R. Lamb;J. Scott;C. Gutleben
影响因子：
3.2
作者：
San-Yuan Chen;V. Lee
通讯作者：
San-Yuan Chen;V. Lee
影响因子：
64.8
作者：
DEARAUJO, CAP;CUCHIARO, JD;SCOTT, JF
通讯作者：
SCOTT, JF
影响因子：
1.5
作者：
T. Kijima;H. Ishiwara
通讯作者：
T. Kijima;H. Ishiwara