Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE
Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE
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PAMBE 制造的 n-InN/p-NiO/GaN 发光二极管的近红外电致发光
DOI：
10.1016/j.optcom.2016.03.045
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发表时间：
2016-07
影响因子：
2.4
通讯作者：
Du, Guotong
中科院分区：
文献类型：
--
作者：
Li, Wancheng;Gao, Fubin;Zhang, Baolin;Du, Guotong
The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ~1.5 V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565 nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction.
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影响因子：
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作者：
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通讯作者：
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作者：
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影响因子：
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DOI：
10.1143/jjap.32.l8
发表时间：
1993-01-15
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
作者：
NAKAMURA, S;SENOH, M;MUKAI, T
通讯作者：
MUKAI, T