Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate
Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate
复制标题
图案化蓝宝石衬底上两步绝缘层方案的 GaN 基近紫外倒装芯片发光二极管的性能增强
DOI：
10.1007/s10854-018-00580-7
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发表时间：
2019-02
期刊：
影响因子：
--
通讯作者：
Liu Yi Jun
中科院分区：
文献类型：
--
作者：
Liu Wen Jie;Hu Xiao Long;Liu Yi Jun
采用两步绝缘层（IL）法在蓝宝石衬底（PSS）上制作了具有n接触全通孔（FVH）结构的氮化物基近紫外（NUV）倒装发光二极管（FC）。与传统的一步离子注入法相比，两步离子注入法制备的NUV FCLED的正向电压降低了0.19 V，而墙插效率（WPE）提高了36.2%。此外，两步IL NUV FCLED的WPE相比，在平坦蓝宝石衬底上的一步IL FCLED的WPE提高了108%。电流密度分布模拟表明，FVH结构的FCLED的电流密度低，分布均匀。这种性能的提高主要归功于PSS引出结构和均匀分布的通孔使有源区电流分布更加均匀。结果表明，提出的两步IL方法是一种有效的方法，以实现大功率和高效率的FCLED。
Nitride-based near-ultraviolet (NUV) flip-chip (FC) light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with n-contact full-via-holes (FVH) structure have been fabricated by a two-step insulating layer (IL) method. Comparing with the conventional one-step IL method, the NUV FCLEDs manufactured by two-step IL method exhibit a reduction of 0.19 V in forward voltage and an enhancement of 36.2% in the wall-plug efficiency (WPE). In addition, the WPE of two-step IL NUV FCLEDs was enhanced by 108% as compared to that of the one-step IL FCLEDs on flat sapphire substrate. The current density distribution simulation shows a low current density and uniform distribution for the FCLEDs with FVH structure. The enhanced performance could be attributed to the PSS extraction structure and the more uniform current distribution at the active region due to the uniformly distributed via-holes. The results indicate that the proposed two-step IL method is an effective way to achieve high-power and high-efficiency FCLEDs.
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影响因子：
2.6
作者：
R. Horng;H. Hu;M. Chu;Yu-Li Tsai;Y. Tsai;Chen‐Peng Hsu;D. Wuu
通讯作者：
R. Horng;H. Hu;M. Chu;Yu-Li Tsai;Y. Tsai;Chen‐Peng Hsu;D. Wuu
影响因子：
2.6
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DOI：
10.1116/1.4939186
发表时间：
2016
期刊：
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子：
--
作者：
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N. Hasanov;B. Zhu;V. Sharma;Shunpeng Lu;Yiping Zhang;Wei Liu;Swee Tiam Tan;X. W. Sun;H. Demir
DOI：
10.1007/s10854-015-2846-1
发表时间：
2015-02
期刊：
Journal of Materials Science: Materials in Electronics
影响因子：
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作者：
T. Jeong;H. Park;K. Jung;J. Baek;J. Ha;Won-Sik Choi;Si-Hyun Park
通讯作者：
T. Jeong;H. Park;K. Jung;J. Baek;J. Ha;Won-Sik Choi;Si-Hyun Park
影响因子：
3.8
作者：
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G. Weng;Shaoqiang Chen;Baoping Zhang;Xiaobo Hu;S. Kuboya;K. Onabe