Theoretical and experimental study on epitaxial growth of antiphase boundary free GaAs on hydrogenated on-axis Si(001) surfaces
Theoretical and experimental study on epitaxial growth of antiphase boundary free GaAs on hydrogenated on-axis Si(001) surfaces
复制标题
氢化轴上Si(001)表面外延生长反相界自由GaAs的理论与实验研究
DOI：
10.1088/1361-6463/ac19e1
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发表时间：
2021
影响因子：
3.4
通讯作者：
Xiaomin Ren
中科院分区：
文献类型：
--
作者：
Weirong Chen;Jun Wang;Lina Zhu;Guofeng Wu;Yuanqing Yang;Chunyang Xiao;Jiachen Li;Haijing Wang;Yanxing Jia;Yongqing Huang;Xiaomin Ren
在Si（001）表面形成双层原子台阶是消除GaAs/Si（001）界面反相界的有效方法。从第一性原理出发，计算和分析了具有不同原子台阶结构的Si（001）面的表面能。通过实验确定了最佳氢退火工艺条件：氢压800 mbar，退火温度800 °C，退火时间10 min。在此退火条件下，用金属有机物化学气相沉积法在Si（001）衬底上生长了420 nm无APB的GaAs外延层。从热力学和动力学角度解释了退火温度对GaAs/Si（001）样品APB密度的影响。优化Si（001）面上无APB的III-V族外延材料的生长条件对于大规模硅单片集成光电器件具有重要意义。
The formation of double-layer atomic steps on Si(001) surfaces is an efficient way to eliminate the antiphase boundaries (APBs) on GaAs/Si(001) interfaces. The surface energy of on-axis Si(001) surfaces with different atomic step structures was calculated and analyzed from the first principles. An optimal hydrogen-annealing process condition, the hydrogen pressure of 800 mbar and the annealing temperature of 800 °C for 10 min, was obtained experimentally. Under this annealing condition, a 420 nm APB-free GaAs epitaxial layer grown on on-axis Si(001) substrates was achieved by metal-organic chemical vapor deposition. The effect of the annealing temperature on the APB density of the GaAs/Si(001) samples was explained from the aspects of thermodynamics and kinetics. It is of great significance to optimize the growth conditions of APB-free III–V epitaxial materials on on-axis Si(001) surfaces for the large-scale silicon monolithic integration of optoelectronic devices.
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影响因子：
9
作者：
Keshuang Li;Junjie Yang;Ying Lu;M. Tang;P. Jurczak;Zizhuo Liu;Xuezhe Yu;Jae-Seong Park;H. Deng;H. Jia;Manyu Dang;A. Sánchez;R. Beanland;Wei Li;Xiaodong Han;Jinchuan Zhang;Huan Wang;Fengqi Liu;Siming Chen;A. Seeds;P. Smowton;Huiyun Liu
通讯作者：
Keshuang Li;Junjie Yang;Ying Lu;M. Tang;P. Jurczak;Zizhuo Liu;Xuezhe Yu;Jae-Seong Park;H. Deng;H. Jia;Manyu Dang;A. Sánchez;R. Beanland;Wei Li;Xiaodong Han;Jinchuan Zhang;Huan Wang;Fengqi Liu;Siming Chen;A. Seeds;P. Smowton;Huiyun Liu
影响因子：
1.8
作者：
KROEMER, H
通讯作者：
KROEMER, H
影响因子：
35
作者：
Liang, Di;Bowers, John E.
通讯作者：
Bowers, John E.
影响因子：
3.6
作者：
Si Zhu;Bei Shi;K. Lau
通讯作者：
Si Zhu;Bei Shi;K. Lau
DOI：
10.1109/jstqe.2020.2964381
发表时间：
2020-01
影响因子：
4.9
作者：
Y. Wan;C. Shang;J. Norman;Bei Shi;Qiang Li;N. Collins;M. Dumont;K. May;Lau;A. Gossard;J. Bowers
通讯作者：
Y. Wan;C. Shang;J. Norman;Bei Shi;Qiang Li;N. Collins;M. Dumont;K. May;Lau;A. Gossard;J. Bowers