Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.
Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.
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Al掺杂对原子层沉积ZnO薄膜性能的影响
DOI：
10.1186/s11671-016-1625-0
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发表时间：
2016-12
影响因子：
--
通讯作者：
Chen LY
中科院分区：
文献类型：
--
作者：
Zhai CH;Zhang RJ;Chen X;Zheng YX;Wang SY;Liu J;Dai N;Chen LY
本文报道了用原子层沉积技术制备的掺铝氧化锌薄膜的结构、光学和电学性质的调谐。随着Al掺杂量的增加，ZnO薄膜的衍射峰由（002）向（100）的演化表明薄膜生长模式的变化。利用椭圆偏振光谱法研究了AZO薄膜的厚度、光学常数和带隙。由于Al掺杂后载流子浓度的增加，可以观察到带隙和吸收边的蓝移，这可以通过Burstein-Moss效应来解释。发现不同掺杂浓度的载流子浓度和电阻率有明显的变化，并讨论了最佳掺杂浓度。掺铝氧化锌薄膜的性能调制和改善对于其作为透明导体在各种应用中的应用具有重要意义。本文的在线版本（doi：10.1186/s11671-016-1625-0）包含补充材料，可供授权用户使用。
The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications. The online version of this article (doi:10.1186/s11671-016-1625-0) contains supplementary material, which is available to authorized users.
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