Preparation and optimization of freestanding GaN using low-temperature GaN layer
Preparation and optimization of freestanding GaN using low-temperature GaN layer
复制标题
使用低温GaN层制备和优化独立式GaN
DOI：
10.1007/s11706-019-0466-z
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发表时间：
2019-09
影响因子：
2.7
通讯作者：
Hu Haixiao
中科院分区：
文献类型：
--
作者：
Tian Yuan;Shao Yongliang;Hao Xiaopeng;Wu Yongzhong;Zhang Lei;Dai Yuanbin;Huo Qin;Zhang Baoguo;Hu Haixiao
本文提出了一种利用低温GaN层获得自支撑GaN的方法。为了获得多孔结构和增加结晶度，LT-GaN层在高温下退火。分析了不同厚度和不同退火温度的LT-GaN层退火前后的形貌。通过对不同LT-GaN层制备GaN薄膜的比较，获得了最佳的LT-GaN工艺。HRXRD和拉曼结果表明，在1090 °C退火的800 nm LT-GaN层上生长的GaN具有良好的晶体质量和较小的应力。在冷却之后，GaN膜成功地与衬底分离。对该方法的自分离机理进行了探讨。利用截面EBSD成像测量研究了低温缓冲层对晶体质量的改善和应力消除的作用。通过PL测量还确定了所获得的自支撑GaN膜的光学性质。
In this work, a method to acquire freestanding GaN by using low temperature (LT)-GaN layer was put forward. To obtain porous structure and increase the crystallinity, LT-GaN layers were annealed at high temperature. The morphology of LT-GaN layers with different thickness and annealing temperature before and after annealing was analyzed. Comparison of GaN films using different LT-GaN layers was made to acquire optimal LT-GaN process. According to HRXRD and Raman results, GaN grown on 800 nm LT-GaN layer which was annealed at 1090 °C has good crystal quality and small stress. The GaN film was successfully separated from the substrate after cooling down. The self-separation mechanism of this method was discussed. Cross-sectional EBSD mapping measurements were carried out to investigate the effect of LT-buffer layer on improvement of crystal quality and stress relief. The optical property of the obtained freestanding GaN film was also determined by PL measurement.
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影响因子：
4
作者：
Chao, C. L.;Chiu, C. H.;Cheng, S. J.
通讯作者：
Cheng, S. J.
影响因子：
3.1
作者：
Shao, Yongliang;Dai, Yuanbin;Tian, Yuan
通讯作者：
Tian, Yuan
DOI：
10.1016/s0921-5107(02)00048-x
发表时间：
2002-05
影响因子：
3.6
作者：
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影响因子：
3
作者：
Kim, HM;Oh, JE;Kang, TW
通讯作者：
Kang, TW
影响因子：
3.7
作者：
Cui, Y;Li, L
通讯作者：
Li, L