Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence
Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence
复制标题
阴极发光研究 SrTiO3 中氧空位沿位错的迁移
DOI：
10.1088/1361-6463/ab3b3e
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发表时间：
2019-09
影响因子：
3.4
通讯作者：
Takashi Sekiguchi
中科院分区：
文献类型：
--
作者：
Wang Peng;Yi Wei;Chen Jun;Shun Ito;Cui Can;Takashi Sekiguchi
用阴极发光技术研究了位错对未掺杂srtio3单晶中氧空位的影响。位于~ 2.8 eV的主导发光峰是由氧空位形成的。随着氧空位的积累，在特定位错处观察到增强的发光。在氧化或还原气氛下退火时，位错核处氧离子的扩散率与体中氧离子的扩散率几乎相同。CL结果表明，位错容易引发氧空位的积累，而氧空位的扩散可能不会受到明显影响。
The impact of dislocations on oxygen vacancies in un-doped SrTiO 3 single crystal has been investigated by cathodoluminescence (CL). The dominated luminescence peak located at~ 2.8 eV is originated from oxygen vacancies. Enhanced luminescence has been observed at specific dislocations with the accumulation of oxygen vacancies. Under annealing either in oxidizing or reducing atmosphere, the diffusivity of oxygen ions at dislocation cores is nearly the same as that in the bulk. CL results suggest that the accumulation of oxygen vacancies is easily triggered by dislocations, while the diffusion of oxygen vacancies may not be significantly affected.
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