Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory
Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory
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热辅助电铸通过抑制非晶碳基电化学金属化存储器中的过冲电流来提高性能
DOI：
10.1063/5.0065658
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发表时间：
2021-10
影响因子：
4
通讯作者：
Yichun Liu
中科院分区：
文献类型：
--
作者：
Qiaoling Tian;Xiaoning Zhao;Xiaohan Zhang;Huai Lin;Di Wang;Guozhong Xing;Zhongqiang Wang;Ya Lin;Haiyang Xu;Yichun Liu
提出了一种热辅助电铸（TAE）方法，用于解决Cu/a-C/Pt结构电化学金属化（ECM）存储器的电流过冲问题，并改善其阻变（RS）性能。在初始电铸过程中，热处理可以促进金属导电丝（CF）的电化学形成。所需的电铸电压被降低，并且不期望的过冲电流被抑制。结果，小区的RS性能得到改善，包括减小的RS参数波动、增大的开/关比和增强的循环耐久性。该电池可以在50 μA的低顺应电流（ICC）下工作，这是报告的基于a-C的ECM存储器的最低值之一。受益于低ICC，获得了在单个单元中具有五个非易失性电阻状态的多级存储器。TAE方法的主要作用被解释为避免由过冲电流引起的极端高温。电导-原子力显微镜映射表明，过冲电流的抑制可以避免Cu阳离子向a-C层的过注入，从而使CF具有简单的结构和低的随机性。本文的工作为解决电流过冲问题和提高ECM存储器性能提供了一种可行的方法。
A thermal-assisted electroforming (TAE) method is proposed to address the current overshoot issue and improve the resistive switching (RS) performance of electrochemical metallization (ECM) memory with a Cu/amorphous carbon (a-C)/Pt structure. In the initial electroforming process, thermal treatment can promote the electrochemical formation of metallic conductive filament (CF). The required electroforming voltage is reduced, and the undesirable overshoot current is suppressed. As a result, the RS performance of the cell is improved, including reduced RS parameter fluctuations, enlarged off/on ratio, and enhanced cycling endurance. The cell can be operated with a low compliance current (ICC) of 50 μA, which is among the lowest value of reported a-C-based ECM memories. Benefit from the low ICC, multilevel memory with five nonvolatile resistance states in a single cell is obtained. The main role of the TAE method is interpreted as to avoid the extreme high-temperature caused by the overshoot current. Conductive-atomic force microscopy mapping implies that the suppression of overshoot current can avoid over-injection of Cu cations into the a-C layer, facilitating CF with a simple structure and low randomness. The present work offers a feasible approach for addressing the current overshoot issue and improving the performance of ECM memory.
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