Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation
Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation
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使用纳米压痕改进分析来评估金刚石基氮化镓的界面韧性
DOI：
10.1016/j.scriptamat.2021.114370
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发表时间：
2022
影响因子：
6
通讯作者：
Field D
中科院分区：
文献类型：
--
作者：
Field D
一种改进的分析界面韧性使用纳米压痕引起的起泡的薄膜上的刚性基板上的GaN上的金刚石被证明。Hutchinson-Suo分析需要精确测量水泡尺寸，通常使用来自3-D地形图的2-D线扫描测量。新气象学克服了这种技术的缺点，通过拟合的3-D解析解的固定Kicrchoff板的拓扑图的水泡。这使得量化的界面韧性较小的气泡在GaN上的钻石，以前假设无效的分析，由于线扫描分析的不足。研究了三个样品，发现其界面韧性范围为0.6-1 J m−2。此外，GaN中的残余应力和界面韧性之间的关系进行了研究，使用光致发光光谱。在所有情况下，发现GaN在金刚石界面处处于增加的压缩下，高达-0.81GPa，尽管没有观察到与界面韧性的相关性。
An improved analysis of the interfacial toughness using nanoindentation induced blistering of thin films on stiff substrates is demonstrated on GaN-on-diamond. The Hutchinson-Suo analysis requires accurate measurement of blister dimensions, conventionally measured using 2-D line-scans from 3-D topographical maps. The new meteorology overcomes shortcomings of this technique by fitting the 3-D analytical solution of a clamped Kicrchoff plate to the topological map of the blister. This allowed for quantification of interfacial toughness of smaller blisters in GaN-on-diamond, previously assumed invalid for analysis due to inadequacies of the line-scan analysis. Three samples were investigated and found to have interfacial toughness ranging from 0.6–1 J m−2. Additionally, the relationship between residual stress in the GaN and interfacial toughness was investigated using photoluminescence spectroscopy. In all cases, the GaN was found to be under increased compression at the diamond interface by up to -0.81 GPa, although no correlation with interfacial toughness was observed.
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影响因子：
9.5
作者：
Yan Zhou;Julian Anaya;J. Pomeroy;Huarui Sun;X. Gu;A. Xie;E. Beam;M. Becker;T. Grotjohn;Cathy Lee;Martin Kuball
通讯作者：
Yan Zhou;Julian Anaya;J. Pomeroy;Huarui Sun;X. Gu;A. Xie;E. Beam;M. Becker;T. Grotjohn;Cathy Lee;Martin Kuball
氧化铝薄膜在三元面心立方合金薄膜的整个成分范围内的界面粘附：组合纳米压痕研究
影响因子：
8.4
作者：
R. Schoeppner;Calum G. Ferguson;L. Pethö;Carlos Guerra;A. Taylor;M. Polyakov;B. Putz;J. Breguet;I. Utke;J. Michler
通讯作者：
J. Michler
影响因子：
9.5
作者：
Luke Yates;Jonathan Anderson;X. Gu;Cathy Lee;T. Bai;M. Mecklenburg;T. Aoki;M. Goorsky;M. Kuball;E. Piner;S. Graham
通讯作者：
Luke Yates;Jonathan Anderson;X. Gu;Cathy Lee;T. Bai;M. Mecklenburg;T. Aoki;M. Goorsky;M. Kuball;E. Piner;S. Graham
影响因子：
4
作者：
Zhao, DG;Xu, SJ;Yang, H
通讯作者：
Yang, H
影响因子：
6
作者：
Liu, Dong;Francis, Daniel;Kuball, Martin
通讯作者：
Kuball, Martin