Plasma-assisted growth and nitrogen doping of graphene films
Plasma-assisted growth and nitrogen doping of graphene films
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石墨烯薄膜的等离子体辅助生长和氮掺杂
DOI：
10.1063/1.4729823
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发表时间：
2012-06
影响因子：
4
通讯作者：
Zhang, W. J.
中科院分区：
文献类型：
--
作者：
Yang, X.;Lee, C. S.;Lee, S. T.;Zhang, W. J.
使用固态碳源聚甲基丙烯酸甲酯，利用微波等离子体在铜箔上合成单层或双层石墨烯片。与……相比，反应性等离子体的使用使得石墨烯能够在更低的温度下生长。
Microwave plasmas were employed to synthesize single- or double-layer graphene sheets on copper foils using a solid carbon source, polymethylmetacrylate. The utilization of reactive plasmas enables the graphene growth at reduced temperatures as compared to conventional thermal chemical vapor deposition processes. The effects of substrate temperature on graphene quality were studied based on Raman analysis, and a reduction of defects at elevated temperature was observed. Moreover, a facile approach to incorporate nitrogen into graphene by plasma treatment in a nitrogen/hydrogen gas mixture was demonstrated, and most of the nitrogen atoms were verified to be pyridinelike in carbon network.
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影响因子：
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通讯作者：
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影响因子：
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作者：
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通讯作者：
Tour, James M.