Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review
Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review
复制标题
碳化硅中硅空位的自旋和光学性质 â 综述
DOI:
10.1002/pssb.201700258
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发表时间:
2018
期刊:
影响因子:
--
通讯作者:
G. V. Astakhov
中科院分区:
文献类型:
--
作者:
S. A. Tarasenko;A. V. Poshakinskiy;D. Simin;V. A. Soltamov;E. N. Mokhov;P. G. Baranov;V. Dyakonov;G. V. Astakhov
We discuss the fine structure and spin dynamics of spin‐3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., which can be utilized for efficient room‐temperature sensing, particularly by purely optical means or through the optically detected magnetic resonance. We discuss the experimental achievements in magnetometry and thermometry based on the spin state mixing at level anticrossings in an external magnetic field and the underlying microscopic mechanisms. We also discuss spin fluctuations in an ensemble of vacancies caused by interaction with environment.
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影响因子:
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DOI:
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发表时间:
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影响因子:
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