Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET.
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET.
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DOI：
10.1186/s11671-022-03685-5
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发表时间：
2022-04-18
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提出了一种新型的集成自偏置N-MOSFET的无骤回RC-LIGBT，并对其进行了仿真研究。该器件在阳极有源区集成自偏置N-MOSFET（ISM）。ISM的一侧短接到RC-LIGBT的P +阳极电极，另一侧经由浮置欧姆接触连接到N +阳极。ISM的自适应导通/关断有助于改善ISM RC-LIGBT的静态和动态性能。在正向状态下，由于ISM的关断状态，与SSA（分离短路阳极）和STA（阳极中的分段沟槽）LIGBT相比，可以有效地抑制骤回而不需要额外的器件面积。在反向导通时，ISM导通，ISM中的寄生NPN击穿，为反向电流提供电流路径。同时，在关断和反向恢复状态期间，ISM导通，提供快速的电子提取路径，因此，可以获得导通状态电压降（Von）和关断损耗（Eoff）之间的上级折衷以及改善的反向恢复特性。与STA器件相比，所提出的ISM RC-LIGBT将Eoff降低了21.5%而没有骤回。其反向恢复电荷比相同电压下Lb = 40/60 μm的SSA LIGBT减少了53.7%/58.6%。由于突出的静态和动态特性，ISM RC-LIGBT在一个完整的开关周期内的功率损耗降低。
A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P + anode electrode of RC-LIGBT and the other side is connected to the N + anode via a floating ohmic contact. The adaptively turn-on/off of the ISM contributes to improve the static and dynamic performance of the ISM RC-LIGBT. In the forward-state, due to the off-state of the ISM, the snapback could be effectively suppressed without requiring extra device area compared to the SSA (separated shorted anode) and STA (segmented trenches in the anode) LIGBTs. In the reverse conduction, the ISM is turned on and the parasitic NPN in the ISM is punched through, which provides a current path for the reverse current. Meanwhile, during the turn-off and reverse recovery states, the ISM turns on, providing a rapid electron extraction path. Thus, a superior tradeoff between the on-state voltage drop (Von) and turnoff loss (Eoff) as well as an improved reverse recovery characteristic can be obtained. Compared to the STA device, the proposed ISM RC-LIGBT reduces Eoff by 21.5% without snapback. Its reverse recovery charge is reduced by 53.7%/58.6% compared to that of the SSA LIGBT with Lb = 40/60 μm at the same Von. Due to the prominent static and dynamic characteristic, the power loss of ISM RC-LIGBT in a completed switching cycle is reduced.
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