Suspended membrane GaN gratings for refractive index sensing

Suspended membrane GaN gratings for refractive index sensing
复制标题

用于折射率传感的悬浮膜 GaN 光栅

DOI:
10.7567/apex.7.052201
复制
发表时间:
2014-05
影响因子:
2.3
通讯作者:
Zhu, Hongbo
Zhu, Hongbo
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Chen, Jiajia;Shi, Zheng;He, Shumin;Garcia, Martin Lopez;Chen, Lifeng;Hueting, Nikolai A.;Cryan, Martin;Zhang, Miao;Zhu, Hongbo

文献摘要

参考文献

被引文献

相似文献

在本文中,我们描述了 GaN 层背面减薄的制造和新颖程序,从而提高了光学性能。然后进行角分辨反射率测量来表征 GaN 光栅,并显示谐振波长对光栅周期和膜厚度的依赖性。测量结果与基于严格耦合波分析 (RCWA) 的电磁模型相比较。改变介电环境已被证明是一种新颖的传感机制,这项工作为制造用于可见光波长范围内的折射率传感应用的新型 GaN 谐振光子器件开辟了道路。
In this paper, we describe the fabrication and the novel procedure for back thinning the GaN layer, which leads to improved optical performance. Angular-resolved reflectance measurements are then conducted to characterize the GaN gratings and show the dependence of resonant wavelength on grating period and membrane thickness. The measured results compare well with electromagnetic modeling based on rigorous coupled wave analysis (RCWA). Altering the dielectric environment has been shown as a novel sensing mechanism, and this work opens the way to the fabrication of novel GaN resonant photonic devices for refractive index sensing applications in the visible wavelength range.
DOI: 10.1364/oe.17.022535
发表时间: 2009-12-07
期刊: OPTICS EXPRESS
影响因子: 3.8
作者:
Lee, Joonhee;Ahn, Sungmo;Jeon, Heonsu
通讯作者: Jeon, Heonsu
DOI: 10.1364/oe.20.020551
发表时间: 2012-08
期刊: Optics express
影响因子: 3.8
作者:
Tzeng-Tsong Wu;Yu-Cheng Syu;Shu-Hsien Wu;W. T. Chen;T. Lu;Shing-chung Wang;Chiang Pang Hai;D. Ts
通讯作者: Tzeng-Tsong Wu;Yu-Cheng Syu;Shu-Hsien Wu;W. T. Chen;T. Lu;Shing-chung Wang;Chiang Pang Hai;D. Ts
DOI: 10.1103/physrevb.85.235145
发表时间: 2012-06
期刊: Physical Review B
影响因子: 3.7
作者:
M. López-García;J. Galisteo‐López;C. López;A. García-Martín
通讯作者: M. López-García;J. Galisteo‐López;C. López;A. García-Martín
DOI: 10.1109/lpt.2009.2024221
发表时间: 2009-06
影响因子: 2.6
作者:
Yongjin Wang;F. Hu;Masashi Wakui;K. Hane
通讯作者: Yongjin Wang;F. Hu;Masashi Wakui;K. Hane
使用 GaN-on-Si 平台制造大面积悬浮 MEMS 结构
DOI: 10.1109/led.2009.2028905
发表时间: 2009-09
影响因子: 4.9
作者:
Yan, Guizhen;Cai, Yong;Yang, Zhenchuan;Lin, Wenkui;Lv, Jianan;Chen, Kevin J.;Zhang, Baoshun
通讯作者: Zhang, Baoshun