Influence of thickness on strain state and surface morphology of AlN grown by HVPE
Influence of thickness on strain state and surface morphology of AlN grown by HVPE
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厚度对HVPE生长AlN应变状态和表面形貌的影响
DOI：
10.1088/1674-4926/37/12/123001
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发表时间：
2016-12
影响因子：
5.1
通讯作者：
徐科
中科院分区：
文献类型：
--
作者：
王林军;刘雪华;王建峰;徐科
采用高温氢化物气相外延技术在c面蓝宝石衬底上生长了AlN厚膜。用透射电子显微镜、场发射扫描电子显微镜、拉曼光谱和原子力显微镜(AFM)研究了AlN的应变状态和晶体质量随厚度的变化规律。随着厚度的增加，外延层中的应力逐渐减小，这归因于厚度在前几个微米处的位错反应。当厚度大于20μm时，由于裂纹的形成，应力几乎完全松弛。湿法腐蚀实验表明，位错密度随厚度的增加而减小。原子力显微镜图像显示，随着厚度的增加，表面的暗斑密度明显减少，原子台阶变直。
AlN thick films were grown on c-plane sapphire substrates by hydride vapor phase epitaxy at high temperature. The evolution of the strain state and crystal quality of AlN with increase of thickness were investigated by transmission electron microscopy, field-emission scanning electron microscopy, Raman spectra and atomic force microscopy (AFM). As the thickness increased, the stress in the epilayers decreased gradually, which was attributed to the reaction of dislocations at the first several microns in thickness. When the thickness was more than 20 μm, the stress was almost fully relaxed due to the formation of cracks. Wet etching experiments indicated that the dislocation density decreased with the increase of thickness. The AFM images showed that the density of dark spots on the surface obviously decreased and the atomic steps became straight as the thickness increased.
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影响因子：
35
作者：
Oto, Takao;Banal, Ryan G.;Kawakami, Yoichi
通讯作者：
Kawakami, Yoichi
影响因子：
1.8
作者：
N. Okada;N. Kato;S. Sato;T. Sumii;Naoki Fujimoto;M. Imura;K. Balakrishnan;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki;T. Takagi;T. Noro;A. Bandoh
通讯作者：
N. Okada;N. Kato;S. Sato;T. Sumii;Naoki Fujimoto;M. Imura;K. Balakrishnan;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki;T. Takagi;T. Noro;A. Bandoh
影响因子：
3.7
作者：
Prokofyeva, T;Seon, M;Zollner, S
通讯作者：
Zollner, S
影响因子：
4
作者：
Hirayama, Hideki;Yatabe, Tohru;Kamata, Norihiko
通讯作者：
Kamata, Norihiko
影响因子：
5.1
作者：
W. Li 李;Peng 鹏 Jin 金;W. Wang 王;D. Mao 毛;G. Liu 刘;Z. Wang 王;J. Wang 王;F. Xu 许;Bo 波 Shen 沈
通讯作者：
W. Li 李;Peng 鹏 Jin 金;W. Wang 王;D. Mao 毛;G. Liu 刘;Z. Wang 王;J. Wang 王;F. Xu 许;Bo 波 Shen 沈