Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers
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具有背对背渐变 AlGaN 层的高性能增强型 HFET 的仿真
DOI：
10.1007/s11432-018-9503-9
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发表时间：
2018-06
期刊：
影响因子：
--
通讯作者：
Luo Xiaorong
中科院分区：
文献类型：
--
作者：
Peng Fu;Yang Chao;Deng Siyu;Ouyang Dongya;Zhang Bo;Wei Jie;Luo Xiaorong
提出并研究了一种新型三维空穴气（3DHG）增强模式（E模式）异质结构场效应晶体管（HFET）。它具有背靠背梯度AlGaN（BGA）势垒层，由正梯度AlGaN层和负梯度AlGaN层组成，形成极化梯度，随后分别在正梯度AlGaN层和负梯度AlGaN层中感应出三维电子气（3DEG）和3DHG。源极和漏极位于金属-绝缘体-半导体(MIS)沟槽栅极的同一侧，源极与HfO2栅极绝缘体接触。首先，由于正梯度AlGaN中的高密度3DEG，导通电流得到显着改善。接下来，源极和3DEG之间的垂直导电沟道被3DHG阻挡，从而实现E模式。阈值电压(Vth)可以通过部分掺杂导电沟道来调制。随后，获得高击穿电压（BV），因为由极化电荷形成的极化结有助于耗尽截止状态下的漂移区。其次，由于源极的特殊位置，BGA-HFET 比传统的 HFET (Con-HFET) 更小。所提出的 HFET 的 BV 从具有相同栅漏间距的 Con-HFET 的 39 V 急剧增加到 919 V，饱和漏电流增加了 103.5%。
A novel three-dimensional hole gas (3DHG) enhancement-mode (E-mode) heterostructure fieldeffect transistor (HFET) is proposed and investigated. It features back-to-back graded AlGaN (BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas (3DEG) and 3DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor (MIS) trench gate, and the source is in contact with the HfO2gate insulator. First, the on-state current is significantly improved owing to the high-density 3DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3DEG is blocked by the 3DHG, thereby realizing the E-mode. The threshold voltage (Vth) can be modulated by a partial doping conductive channel. Subsequently, a high breakdown voltage (BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the off-state. Next, the BGA-HFET is smaller than the conventional HFET (Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.
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影响因子：
3.1
作者：
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通讯作者：
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影响因子：
3.1
作者：
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影响因子：
8.8
作者：
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通讯作者：
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影响因子：
4
作者：
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通讯作者：
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