Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
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InGaN/GaN 量子阱结构中沟槽状缺陷的阴极发光高光谱成像
DOI：
10.1088/0022-3727/47/13/135107
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Bruckbauer J
中科院分区：
文献类型：
--
作者：
Bruckbauer J
基于iii -氮化物体系的光电器件尽管存在大量缺陷，但仍具有显著的光学效率。本文利用阴极发光（CL）高光谱成像技术研究了InGaN/GaN多量子阱（MQW）结构。在同一高光谱CL测量中，研究了不同沟槽宽度的沟槽缺陷类型，即形成闭环和开环的宽沟槽或窄沟槽。宽沟槽包围的区域显示出强红移（≈90 meV）和强度增加，而窄沟槽内的区域仅表现出小红移（≈10 meV），强度与周围无缺陷区域相比略有下降。透射电镜（TEM）显示，一些沟槽缺陷由凸起的中心区域组成，这是由InGaN井厚度增加了约40%引起的。还讨论了发光变化的原因与TEM结果识别缺陷的潜在结构的关系。了解这些缺陷及其发射特性对进一步提高和发展发光二极管具有重要意义。
Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies despite suffering from a large density of defects. In this work we use cathodoluminescence (CL) hyperspectral imaging to study InGaN/GaN multiple quantum well (MQW) structures. Different types of trench defects with varying trench width, namely wide or narrow trenches forming closed loops and open loops, are investigated in the same hyperspectral CL measurement. A strong redshift (≈ 90 meV) and intensity increase of the MQW emission is demonstrated for regions enclosed by wide trenches, whereas those within narrower trenches only exhibit a small redshift (≈ 10 meV) and a slight reduction of intensity compared with the defect-free surrounding area. Transmission electron microscopy (TEM) showed that some trench defects consist of a raised central area, which is caused by an increase of about 40% in the thickness of the InGaN wells. The causes of the changes in luminescences are also discussed in relation to TEM results identifying the underlying structure of the defect. Understanding these defects and their emission characteristics is important for further enhancement and development of light-emitting diodes.
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DOI：
10.1002/pssa.200304089
发表时间：
2004-03-01
影响因子：
2
作者：
Martin, RW;Edwards, PR;Watson, IM
通讯作者：
Watson, IM
影响因子：
4
作者：
Bruckbauer, Jochen;Edwards, Paul R.;Martin, Robert W.
通讯作者：
Martin, Robert W.
影响因子：
1.9
作者：
Edwards, Paul R.;Martin, Robert W.
通讯作者：
Martin, Robert W.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M
在紧耦合喷头 (CCS) MOCVD 反应器中生长的 GaN-InGaN 量子阱和 LED 结构
DOI：
--
发表时间：
2002
期刊：
影响因子：
--
作者：
E. Thrush;M. Kappers;P. Dawson;D. Graham;J. Barnard;M. E. Vickers;L. Considine;J. Mullins;C. Humphreys
通讯作者：
C. Humphreys