Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors.
Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors.
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界面钝化对基于溶液工艺的 ZnO 薄膜晶体管的电性能、稳定性和接触性能的影响
DOI：
10.3390/ma11091761
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发表时间：
2018-09-18
期刊：
影响因子：
--
通讯作者：
Hao Y
中科院分区：
文献类型：
--
作者：
Wan L;He F;Qin Y;Lin Z;Su J;Chang J;Hao Y
报道了低温溶液处理的氧化锌薄膜晶体管(TFT)，以及4-氯苯甲酸(PCBA)层的界面钝化对器件性能的影响。结果表明，含界面改性层的氧化锌薄膜晶体管的电子迁移率为4.50cm2 V−1 S−1，而未修饰的薄膜晶体管的载流子迁移率为2.70cm2 V−1 S−1。与未修饰的薄膜晶体管相比，界面改性层的薄膜晶体管能显著提高器件的寿命稳定性和偏压稳定性。最重要的是，当使用高功函数金属如银和金时，界面改性层还可以降低源/漏电极与氧化锌薄膜之间的接触势垒。这些结果表明，用界面改性层的低温溶液工艺可以获得高性能的TFT，这意味着它们具有进一步的应用潜力。
This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.
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