Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
复制标题
AlGaN/AlN/GaN 肖特基势垒二极管肖特基接触下串联电阻的测定
DOI：
10.1088/1674-1056/21/1/017103
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发表时间：
2012-01
影响因子：
1.7
通讯作者：
林兆军
中科院分区：
文献类型：
--
作者：
林兆军
制作了矩形AlGaN/AlN/GaN异质结场效应晶体管（HFET），其栅源由AlGaN/AlN/GaN肖特基势垒二极管（SBD）构成。基于AlGaN/AlN/GaN SBD的正向电流-电压特性和电容-电压特性，采用功耗法计算了肖特基接触下的串联电阻，并验证了该方法的有效性。最后，利用功耗法计算了一系列圆形AlGaN/AlN/GaN SBD的二维电子气电子迁移率。结果表明，肖特基接触下的串联电阻是不可忽略的，它对AlGaN/AlN/GaN SBD和AlGaN/AlN/GaN HFET的分析和表征具有重要意义。
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.
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