Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates
Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates
复制标题
裸纸基板上的横向耦合共面栅极氧化物薄膜晶体管
DOI：
10.1088/0022-3727/47/49/495101
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发表时间：
2014-11
期刊：
影响因子：
--
通讯作者：
Shuanghe Jiang
中科院分区：
文献类型：
--
作者：
Guodong Wu;Xiang Wan;Yi Yang;Shuanghe Jiang
对于传统的薄膜晶体管（TFT），通常采用底栅或顶栅结构，因为沟道电流通常由垂直电容耦合控制。本文利用磷硅酸盐玻璃（PSG）固体电解质中质子空间运动产生的巨大横向双电层（EDL）电容，在裸纸基片上制备了基于横向电容耦合的共面栅氧化铟锌（IZO）-TFT。这里的PSG固体电解质薄膜同时用作栅极缓冲层和平滑缓冲层。这些TFT显示出仅1 V的低电压操作，具有13.4 cm 2 V−1·s的大场效应迁移率，6 × 106的高电流开/关比和75 mV/decade的小亚阈值摆幅。此外，通过引入另一个共面栅，在共面双栅TFT上实现了与逻辑运算。这些简单的横向耦合共面栅IZO-TFT裸纸基板上是非常有前途的低成本便携式传感器和生物电子。
For conventional thin-film transistors (TFTs), bottom-gate or top-gate configuration is always adopted because the channel current is generally controlled by vertical capacitive coupling. In this article, depending on huge lateral electric-double-layer (EDL) capacitor induced by spatial movement of protons in phosphosilicate glass (PSG) solid electrolyte dielectrics, coplanar-gate indium–zinc–oxide (IZO)-TFTs based on the lateral capacitive coupling were fabricated on bare paper substrates. The PSG solid electrolyte films here were used at the same time as gate dielectrics and smooth buffer layers. These TFTs showed a low-voltage operation of only 1 V with a large field-effect mobility of 13.4 cm2 V−1·s, a high current on/off ratio of 6 × 106 and a small subthreshold swing of 75 mV/decade. Furthermore, with introducing another coplanar gate, AND logic operation was also demonstrated on the coplanar dual-gate TFTs. These simple lateral-coupling coplanar-gate IZO-TFTs on bare paper substrates are very promising for low-cost portable sensors and bio-electronics.
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