Electrical conductivity of high-purity germanium crystals at low temperature
Electrical conductivity of high-purity germanium crystals at low temperature
复制标题
高纯锗晶体的低温电导率
DOI：
10.1007/s00339-018-1803-2
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Mei, Dongming
中科院分区：
文献类型：
--
作者：
Yang, Gang;Kooi, Kyler;Wang, Guojian;Mei, Hao;Li, Yangyang;Mei, Dongming
在7 ~ 100 K温度范围内，研究了高纯锗单晶和多晶样品的电导率随温度的变化关系。三个单晶样品的电导率与温度曲线的倒数由两个不同的温度范围组成：高温范围，其中电导率随着温度的降低而增加到最大值，以及低温范围，其中电导率随着温度的降低而继续缓慢降低。相比之下，三个多晶样品的电导率与温度曲线的倒数，除了显示出类似的导电行为的高温和低温范围外，还具有电导率随温度降低而显著降低的中温范围。对应于电导率与温度曲线的倒数上的电导率的最大值的转折点温度（）对于多晶样品比对于单晶样品更高。此外，所有样品的净载流子浓度已根据在整个测量温度范围内测得的电导率计算。计算结果表明，由于热激发，电离载流子浓度随温度的升高而增加，但单晶样品在40 K左右达到饱和，多晶样品在70 K左右达到饱和。单晶样品和多晶样品之间的所有这些差异可以归因于晶界对电荷载流子的捕获和散射效应。提出了相应的物理模型来解释两种样品导电行为的差异。
The temperature dependence of electrical conductivity of single-crystal and polycrystalline high-purity germanium (HPGe) samples has been investigated in the temperature range from 7 to 100 K. The conductivity versus inverse of temperature curves for three single-crystal samples consist of two distinct temperature ranges: a high-temperature range where the conductivity increases to a maximum with decreasing temperature, and a low-temperature range where the conductivity continues decreasing slowly with decreasing temperature. In contrast, the conductivity versus inverse of temperature curves for three polycrystalline samples, in addition to a high- and a low-temperature range where a similar conductive behavior is shown, have a medium-temperature range where the conductivity decreases dramatically with decreasing temperature. The turning point temperature () which corresponds to the maximum values of the conductivity on the conductivity versus inverse of temperature curves are higher for the polycrystalline samples than for the single-crystal samples. Additionally, the net carrier concentrations of all samples have been calculated based on measured conductivity in the whole measurement temperature range. The calculated results show that the ionized carrier concentration increases with increasing temperature due to thermal excitation, but it reaches saturation around 40 K for the single-crystal samples and 70 K for the polycrystalline samples. All these differences between the single-crystal samples and the polycrystalline samples could be attributed to trapping and scattering effects of the grain boundaries on the charge carriers. The relevant physical models have been proposed to explain these differences in the conductive behaviors between two kinds of samples.
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DOI：
--
发表时间：
2012
期刊：
影响因子：
--
作者：
Gang Yang;Guojian Wang;W. Xiang;Y. Guan;Yongchen Sun;D. Mei;Bruce Gray;Y. Chan
通讯作者：
Y. Chan
DOI：
--
发表时间：
1974
期刊：
影响因子：
--
作者：
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通讯作者：
G. Armantrout
影响因子：
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作者：
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通讯作者：
F. Goulding
多晶硅薄膜中半导体晶界半导体势垒的传导模型
影响因子：
3.1
作者：
N. Lu;L. Gerzberg;Chih;J. Meindl
通讯作者：
J. Meindl
DOI：
--
发表时间：
1950
期刊：
影响因子：
--
作者：
W. Dunlap
通讯作者：
W. Dunlap