Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green.
Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green.
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自组装 InGaN 量子点发出绿光的强局域化效应和载流子弛豫动力学
DOI：
10.1186/s11671-015-0772-z
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发表时间：
2015
影响因子：
--
通讯作者：
Zhang BP
中科院分区：
文献类型：
--
作者：
Weng GE;Zhao WR;Chen SQ;Akiyama H;Li ZC;Liu JP;Zhang BP
不同激发功率下的温度依赖性光致发光（PL）证明了金属有机化学气相沉积法生长的自组装InGaN量子点（QDs）具有很强的局部化效应。综合发射强度在30 ~ 160 K范围内逐渐增大，在高激发强度下随着温度的升高而减小，而在低激发强度下这种现象消失。在高激发下，160 K时的发射强度比低温时增强了约40%，内量子效率（IQE）提高了41.1%。提出了一个强局域化模型来描述载流子输运、弛豫和重组的可能过程。利用该模型，可以很好地解释随温度升高的激发功率依赖性发射强度、峰值能量位移和线宽变化的演变。最后，利用双指数模型对不同激发强度下时间分辨PL （TRPL）的双组分衰减进行了观察和分析，从而进一步了解了InGaN量子点中的载流子弛豫动力学。
Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K and then decreases with a further increase in temperature at high excitation intensity, while this phenomenon disappeared at low excitation intensity. Under high excitation, about 40% emission enhancement at 160 K compared to that at low temperature, as well as a higher internal quantum efficiency (IQE) of 41.1%, was observed. A strong localization model is proposed to describe the possible processes of carrier transport, relaxation, and recombination. Using this model, the evolution of excitation-power-dependent emission intensity, shift of peak energy, and linewidth variation with elevating temperature is well explained. Finally, two-component decays of time-resolved PL (TRPL) with various excitation intensities are observed and analyzed with the biexponential model, which enables us to further understand the carrier relaxation dynamics in the InGaN QDs.
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影响因子：
4
作者：
Feng, SW;Cheng, YC;Chyi, JI
通讯作者：
Chyi, JI
影响因子：
4
作者：
Wang, T;Bai, J;Ho, JK
通讯作者：
Ho, JK
金属有机化学气相沉积双波长InGaN/GaN隧道注入发光二极管的光学和结构研究
影响因子：
2.1
作者：
Feng, Zhe Chuan;Zhu, Li-Hong;Yang, Jer-Ren
通讯作者：
Yang, Jer-Ren
影响因子：
4
作者：
Robinson, JW;Rice, JH;Arakawa, Y
通讯作者：
Arakawa, Y
影响因子：
4
作者：
Queren, Desiree;Avramescu, Adrian;Strauss, Uwe
通讯作者：
Strauss, Uwe