Microstructure, ferroelectric and dielectric properties in Nd and Ti co-doped BiFeO3 thin film
Microstructure, ferroelectric and dielectric properties in Nd and Ti co-doped BiFeO3 thin film
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Nd、Ti共掺杂BiFeO3薄膜的微观结构、铁电和介电性能
DOI：
10.1007/s10971-016-3977-4
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发表时间：
2016-02
影响因子：
2.5
通讯作者：
Hu G. D.
中科院分区：
文献类型：
--
作者：
Lv P. P.;Yang C. H.;Geng F. J.;Feng C.;Jiang X. M.;Hu G. D.
摘要采用金属有机物分解法在玻璃衬底上制备了Nd（3%）和Ti（2%）共掺杂的BiFeO 3（BNFTO）薄膜。BNFTO薄膜具有单一的钙钛矿相和无规取向，具有良好的绝缘性能和低漏电流。在BNFTO薄膜中观察到不对称的极化电场环：这主要归因于薄膜中与氧空位相关的缺陷复合物的作用。此外，样品的电容强烈依赖于施加的电压和测量频率。此外，随着施加电压的增加或频率的降低，介电可调谐性逐渐增强。并对增强性能的相关物理机制进行了讨论。当测量频率为1 kHz时，获得了165的高介电常数，27%的介电调谐率和13.5的品质因数。这些结果可被视为高性能BiFeO_3薄膜的进一步发展的基础。图形摘要BNFTO薄膜的极化-电场（P-E）和电容-电压（C-V）曲线在不同的电场和外加偏压下测量。
Abstract Nd (3 %) and Ti (2 %) co-doped BiFeO3 (BNFTO) thin film was deposited on indium tin oxide-coated glass substrate by a metal organic decomposition process. The BNFTO film exhibits a single perovskite phase with random orientation and good insulating property with low leakage current. Asymmetrical polarization–electric field loops are observed in the BNFTO film: This is mainly attributed to the role of oxygen vacancy-related defect complexes in the film. Additionally, the capacitance of the sample is strongly dependent on both the applied voltage and measuring frequency. Furthermore, with the increase in applied voltages or decrease in frequencies, the dielectric tunability is gradually enhanced. The related physics mechanism for the enhanced performance is also discussed. High dielectric constant of 165, dielectric tunability of 27 % and figure of merit of 13.5 are achieved when a measuring frequency of 1 kHz is applied. These present results can be regarded as a base for further development of high-performance BiFeO3 films.Graphical AbstractPolarization–electric field (P–E) and capacitance–voltage (C–V) curves of the BNFTO film measured under various electric fields and applied bias voltages.
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