A Low Temperature Technology for Three-Dimensional Integrated Circuits
三维集成电路低温技术
基本信息
- 批准号:8303450
- 负责人:
- 金额:$ 22.09万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1983
- 资助国家:美国
- 起止时间:1983-05-15 至 1986-10-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Rafael Reif其他文献
Effect of rinsing and drying on silicon surface cleaning for epitaxial growth
- DOI:
10.1007/bf03027244 - 发表时间:
2002-10-01 - 期刊:
- 影响因子:4.000
- 作者:
Hyoun Woo Kim;Kwang-sik Kim;Woon-suk Hwang;Rafael Reif - 通讯作者:
Rafael Reif
Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD)
- DOI:
10.1007/bf02651294 - 发表时间:
1990-04-01 - 期刊:
- 影响因子:2.500
- 作者:
Euijoon Yoon;Patrice Parris;Rafael Reif - 通讯作者:
Rafael Reif
IV-1 – Plasma-Enhanced Chemical Vapor Deposition
- DOI:
10.1016/b978-0-08-052421-4.50015-0 - 发表时间:
1991 - 期刊:
- 影响因子:0
- 作者:
Rafael Reif - 通讯作者:
Rafael Reif
Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM
- DOI:
10.1007/bf02665034 - 发表时间:
1993-02-01 - 期刊:
- 影响因子:2.500
- 作者:
Zhizhen Ye;Yaping Liu;Zhen-Hong Zhou;Rafael Reif - 通讯作者:
Rafael Reif
Rafael Reif的其他文献
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{{ truncateString('Rafael Reif', 18)}}的其他基金
MIT Microfabrication Infrastructure
麻省理工学院微加工基础设施
- 批准号:
9512183 - 财政年份:1995
- 资助金额:
$ 22.09万 - 项目类别:
Standard Grant
Presidential Young Investigator Award: Low Temperature Processing for Very Large Scale Integration
总统青年研究员奖:超大规模集成的低温处理
- 批准号:
8352399 - 财政年份:1984
- 资助金额:
$ 22.09万 - 项目类别:
Continuing Grant
Low Temperature Epitaxial Deposition of Silicon By Plasma Enhanced Cvd
等离子体增强 Cvd 低温外延沉积硅
- 批准号:
8024306 - 财政年份:1981
- 资助金额:
$ 22.09万 - 项目类别:
Continuing grant
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