Multi-Dimensional Computation of Electronic Properties of Semiconductor Microstructures of High Performance Heterojunction Devices

通常将固态器件微结构的电学性质定义为与可移动载流子的自由度有关，即将简单的层状结构定义为二维系统，将双限制结构或量子线和量子球分别定义为一维和零维系统。通常，这些系统被称为超低维系统(ULDS)。目前的技术是基于2-D系统的。然而，高分辨率细线光刻和晶体生长技术的进步表明，量子线和量子球级别的微结构是可能的。具有一维或零维微结构的人造材料在计算机存储和超高器件集成方面的潜在用途是相当可观的。高效的器件模拟算法是模拟微结构特性所必需的，也是引入这种下一代VLSI技术所不可缺少的。这项研究项目致力于开发一种健壮、快速和灵活的算法来确定相关的物理和微结构参数，以优化超低维系统的器件设计和性能。一个由设备物理学家、数值分析员和计算机科学家组成的年轻研究小组将组成一个跨学科小组。

It is usual to define the electronic properties of microstructure of solid state devices in relation to the degree of freedom of mobile charge carriers, i. e. simple layered structures are referred as 2- dimensional (2D) systems, double confined structures or quantum wires and quantum balls are defined as 1-D and 0-D systems respectively. In general, these systems are referred to as Ultra-Low Dimensional Systems (ULDS). Current technology is based on the 2-D systems. However, advances in high resolution fine line lithography and crystal growth techniques indicate that microstructure on the scale of quantum wires and balls may be possible. The potential use of the artificial materials with 1-D or 0-D microstructures for computer memory and ultra-high device integration is considerable. Efficient device simulation algorithms are necessary for modeling the properties of the microstructure and indispensable to the introduction of this next generation of VLSI technology. This research project addresses the development of a robust, fast, and flexible algorithm to determine the relevant physical and microstructure parameters for optimal design and performance of devices of the Ultra-low Dimensional Systems. A team of young investigators composed of device physicists, numerical analyst, and computer scientist will be formed as an interdisciplinary group.