Study of Atomic and Molecular Processes Associated with the Fragmentation of Etchant Gas Plasma Constituents

通过电子束蚀刻硅化合物释放出 蚀刻剂气体如NF3、CF4和SF6的等离子云。 这些 气体在电子束到达更远的地方时， 被入射的电子激发并分解 这样的过程是 复杂的辐射相互作用，电离， 混合气体或基质原子的参与。 这笔赠款 旨在阐明这些重叠的过程， 飞行时间光谱学的组合诊断方法， 质谱，以及如果需要的话，激光诱导荧光。 一个可靠的相互作用模型的演变将是极其重要的。 可用于硅加工工业。

The etching of silicon compounds by electron beams releases a plasma cloud of etchant gases such as NF3, CF4, and SF6. These gases interfere with the electron beam, as they get further excited and broken up by the incoming electrons. Such process is complicated by the radiative interactions, ionization, and the participation of admixed gases or substrate atoms. This grant aims at the elucidation of these overlapping processes by such combined diagnostics approaches of time-of-flight spectroscopy, mass spectrometry, and, if necessary, laser induced fluorescence. The evolvement of a reliable interaction model would be extremely useful to the silicon processing industries.