SBIR: Optical Characterization Techniques for Silicon-on- Insulator Material

目前检测再结晶硅(包括SOI材料)的技术包括湿法(酸)蚀刻和光学显微镜、X射线衍射、扫描电子显微镜或透射电子显微镜的检测。这些技术速度很慢，通常样品会被销毁。PI建议研究角度分辨光散射技术，作为检测再结晶硅和其他微电子材料的一种技术。这项技术将是无扰动的，可以在现场应用，将是快速的，并可以适应自动化。

Present techniques of examining recrystallized silicon, including SOI material, include a wet (acid) etch and examination with an optical microscope, X-ray diffraction, SEM or TEM microscopes. These techniques are slow, and usually the sample is destroyed. The PI propose investigating angle-resolved light scatter techniques as a technique to examine recrystallized silicon as well as other microelectronics materials. The technique would be nonperturbing, could be applied in situ, would be fast, and could be adapted for automation.