SBIR: Optical Characterization Techniques for Silicon-on- Insulator Material

SBIR：绝缘体上硅材料的光学表征技术

• 批准号: 8660077
• 负责人: Scott Wilson
• 金额: $ 3.88万
• 依托单位: Sandia Systems
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-02-01 至 1987-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8660077&HistoricalAwards=false
• 关键词: SBIR; Optical; Characterization; Techniques; Silicon

Present techniques of examining recrystallized silicon, including SOI material, include a wet (acid) etch and examination with an optical microscope, X-ray diffraction, SEM or TEM microscopes. These techniques are slow, and usually the sample is destroyed. The PI propose investigating angle-resolved light scatter techniques as a technique to examine recrystallized silicon as well as other microelectronics materials. The technique would be nonperturbing, could be applied in situ, would be fast, and could be adapted for automation.

目前检测再结晶硅(包括SOI材料)的技术包括湿法(酸)蚀刻和光学显微镜、X射线衍射、扫描电子显微镜或透射电子显微镜的检测。这些技术速度很慢，通常样品会被销毁。PI建议研究角度分辨光散射技术，作为检测再结晶硅和其他微电子材料的一种技术。这项技术将是无扰动的，可以在现场应用，将是快速的，并可以适应自动化。