Laser Scattering Simulations from Submicron Features on Silicon Substrates

硅衬底上亚微米特征的激光散射模拟

• 批准号: 8703667
• 负责人: Gregory Wojcik
• 金额: $ 23.62万
• 依托单位: Weidlinger Associates Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-07-01 至 1989-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8703667&HistoricalAwards=false
• 关键词: Laser; Scattering; Simulations; Submicron; Features

The purpose of the SBIR Phase I research was to demonstrate and validate time-domain numerical solutions of Maxwell's equations for problems involving optical (laser) scattering and diffraction from submicron objects and features on silicon substrates. The intended applications of this computational optics capability is to contaminant monitoring, process monitoring, microlithography, and imaging problems, as encountered in the integrated circuit (ILC) manufacturing process. These results indicate that there is no inherent limitation to simulating rigorously, many, of the optical problems associated with IC fabrication, inspection, and design. This is particularly true with the availability of supercomputers and modern numerical algorithms applied to Maxwell's equations. Certain limitations do exist, however, associated with size of the computational grid, very short or long wavelengths, and fully three-dimensional problems. These limitations will be addressed in Phase II in the context of enhanced radiation conditions and semi-analytic algorithms. The PI has achieved a high level of success in the Phase I effort, and there is every expection for further success in Phase II. The Phase III letters of commitment are impressive.

SBIR第一阶段研究的目的是证明和 验证麦克斯韦方程的时域数值解， 涉及光学（激光）散射和衍射的问题， 在硅衬底上的亚微米物体和特征。 预期 这种计算光学能力的应用是污染物 监控、过程监控、微光刻和成像问题， 如在集成电路（ILC）制造工艺中遇到的。 这些结果表明， 严格模拟，许多与集成电路相关的光学问题， 制造、检查和设计。 这是特别真实的与 超级计算机和现代数值算法的可用性 到麦克斯韦方程。 然而，确实存在某些限制， 与计算网格的大小相关，非常短或长 波长和完全三维的问题。 这些限制 将在第二阶段加强辐射的背景下加以解决 条件和半解析算法。 PI在第一阶段取得了很高的成功 我们的努力，并期待在第二阶段取得进一步的成功。 第三阶段的承诺书令人印象深刻。