An Inverse Optical Scattering Approach to Submicron Integrated Circuit Feature Inspection

亚微米集成电路特征检测的逆光散射方法

• 批准号: 8903372
• 负责人: Gregory Wojcik
• 金额: $ 23.33万
• 依托单位: Weidlinger Associates, Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-15 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8903372&HistoricalAwards=false
• 关键词: Inverse; Optical; Scattering; Approach; Submicron

This is Phase II of an SBIR project to improve integrated circuit metrology. The need to enhance critical dimension measurement and quality control will become acute in the next few years as integrated circuit features begin to approach the .25 micron size. This project is to use numerical inverse scattering theory with laser interferometry to overcome some of the problems associated with conventional metrology. The feasibility of this approach was demonstrated during Phase I of the grant and a prototype Numerical Microscope is currently being developed.

这是 SBIR 项目的第二阶段，旨在改进集成电路计量。 随着集成电路特征开始接近 0.25 微米尺寸，增强关键尺寸测量和质量控制的需求将在未来几年变得更加迫切。 该项目旨在利用数值逆散射理论和激光干涉测量来克服与传统计量学相关的一些问题。 这种方法的可行性在第一阶段的拨款中得到了证明，目前正在开发原型数值显微镜。