Monte Carlo Simulation of Superlattice Devices

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The design of new ultra-small semiconductor is being driven by the possibilities of atomic-scale control of fabrication. Fabrication at the Angstrom scale means that quantum mechanical effects will be important. One of the first results of advances in crystal growth techniques which allow atomic scale control of heterostructure device fabrication are superlattices. In order to characterize the device, electron transport coefficients must be obtained. Electron transport perpendicular to the lattice structure is important but difficult to calculate since the scale of the superlattice is of the same order of magnitude as the atomic lattice. This Engineering Initiation project will use the Monte Carlo simulation technique to investigate transport in superlattice devices. For the first time, high field effects will be examined. Particular attention will be paid to the interaction between transferred electron (Gunn effect) phenomena and superlattice band-folding effects; this knowledge will provide ideas for new device implementations. Furthermore, this research not only will contribute to the area of Solid-State and Microstructures but the Monte Carlo techniques are computationally intensive so that new algorithms will be developed which will enhance Computational Engineering. This Engineering Initiation Award is jointly supported by the Computational Engineering and Solid-State & Microstructures Programs. The institutional support is adequate and the P.I. is fully capable of carrying out the research. I strongly recommend support.