Ultrathin Film Amorphous and Nanocrystalline Semiconductors - Structure, Stability and Electronic Properties

超薄膜非晶和纳米晶半导体 - 结构、稳定性和电子性能

• 批准号: 8714634
• 负责人: Peter Persans
• 金额: $ 11.92万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-01 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8714634&HistoricalAwards=false
• 关键词: Ultrathin; Film; Amorphous; Nanocrystalline; Semiconductors

They will investigate structure, structural relaxation, atomic interdiffusion and crystallization of ultrathin (1-20nm) amorphous silicon and germanium semiconductor films by applying vibrational and optical spectroscopies to amorphous superlattice structures. They will also investigate size and interface effects in nanocrystalline (20nm crystallites) materials formed by annealing or otherwise treating amorphous superlattice structures. Research efforts will include: 1) Development and application of vibrational Raman scattering as a probe of amorphous network strain (i.e. - bond distortions) and compositional mixing at and near amorphous interfaces. 2) Application and analysis of optical techniques including optical absorption, electromodulation (absorption, reflection, luminescence) and Raman scattering to study the formation and growth of crystallites in ultrathin films. 3) Application of Raman and optical techniques to study atomic diffusion in amorphous and nanocrystalline solids. 4) Development and application of optical and optical modulation techniques to study quantum size effects, interface effects and the breakdown of crystal momentum selection rules in nanocrystals with well defined dimensions from 2nm to 20nm. Nanostructured thin film materials will have a direct impact on the ability to develop amorphous thin films for large area applications such as photo- electronic detectors and arrays, field-effect display drivers and photovoltaic devices. Increased understanding of microscopic relaxation, diffusion and crystallization processes will have implications for the development of low temperature processing technologies for three-dimensional integrated circuits, high temperature semiconductors and non-linear optical components.

他们将研究结构，结构弛豫，原子 互扩散和晶化（1- 20 nm） 非晶硅和锗半导体膜 非晶超晶格的振动光谱和光学光谱 结构. 他们还将调查规模和接口 纳米晶体（20 nm微晶）材料形成的影响 通过退火或以其它方式处理非晶超晶格 结构. 研究工作将包括：1）开发和 振动拉曼散射作为探针的应用 无定形网络应变（即-键变形）和 在非晶界面处和附近的成分混合。 （二） 光学技术的应用和分析，包括光学 吸收，电调制（吸收，反射， 发光）和拉曼散射来研究形成， 薄膜中微晶的生长。 3)的应用 拉曼和光学技术研究原子扩散 非晶和纳米晶固体。 4)发展和 应用光学和光学调制技术研究 量子尺寸效应，界面效应和击穿 阱纳米晶中的晶体动量选择规则 定义的尺寸从2nm到20 nm。 纳米结构薄膜 材料将直接影响开发能力， 用于大面积应用的非晶薄膜， 电子探测器和阵列、场效应显示驱动器和 光伏器件 增加对微观的理解 弛豫、扩散和结晶过程将具有 对低温加工发展的启示 三维集成电路高技术 温度半导体和非线性光学元件。