Physics of High-Mobility Materials and Interfaces

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Significant advances resulting from the previous year's support have been made in 1) persistent photocurrent mechanisms in gallium arsenide heterostructures, 2) identifying dominant electron scattering mechanisms in two inverted interfaces (gallium arsenide grown on aluminum gallium arsenide), 3) application of the dissipationless nature of the quantum Hall effect, and 4) electron transport in nanometer-scale lateral superlattice structures. Continued support for this grant which is being transferred from the University of Oregon to Georgia Tech University is strongly recommended.