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Nanometer Tunneling and Coherent Wave Quantum Devices

Nanometer Tunneling and Coherent Wave Quantum Devices
纳米隧道和相干波量子器件
批准号:
8922512
负责人:
Richard Higgins
金额:
$20.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-07-15 至 1994-06-30

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英文摘要
This work represents a coordinated study of nanometer ballistic and quantum wave devices grown, fabricated, and tested using the facilities available to us at the Georgia Tech Microelectronics Research Center. Energy Loss and Other Scattering Mechanisms in Tunneling Structures Our group has recently identified key inelastic and non-k-conserving tunneling events that comprise the valley current. We are proceeding with the study of those valley current components with carefully prepared Coulomb and inelastic scattering centers, to identify mechanisms that limit the performance of two and three terminal tunneling and coherent-wave devices. Charging in Quantum Wells We will measure the charge and potential distribution in stable and bistable quantum well devices in order to evaluate their potential as ultra-fast switches, oscillators, and microwave amplifiers. A closely-associated project will separately model and measure the dynamics of astable behavior in the same devices. Electron Wave Optics Device Demonstration Project We will carry out transport and magnetotransport experiments in order to demonstrate and perfect a predicted energy-selective bandpass filter based on electron wave optic principles. These new device ideas emulate optical and microwave device structure but at length scales a thousand times smaller.
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SBIR Phase I: Novel Low-Cost Inorganic Nanofiltration Module
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    0128488
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    2002
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  • 资助金额:
    $40.0万
  • 财政年份:
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海外基金