Nanometer Tunneling and Coherent Wave Quantum Devices

这项工作代表了纳米弹道和量子波器件的协调研究，使用佐治亚理工学院微电子研究中心提供的设备进行生长、制造和测试。隧道结构中的能量损失和其他散射机制我们的小组最近确定了包括谷电流的关键非弹性和非k守恒隧道事件。我们正在继续研究那些具有精心准备的库仑和非弹性散射中心的谷电流分量，以确定限制二端和三端隧道和相干波器件性能的机制。我们将测量稳态和双稳态量子阱器件中的电荷和电位分布，以评估它们作为超高速开关、振荡器和微波放大器的潜力。一个密切相关的项目将分别模拟和测量同一设备中不稳定行为的动力学。我们将进行输运和磁输运实验，以验证和完善基于电子波光学原理的预测能量选择性带通滤波器。这些新器件的想法模拟了光学和微波器件的结构，但长度要小一千倍。

This work represents a coordinated study of nanometer ballistic and quantum wave devices grown, fabricated, and tested using the facilities available to us at the Georgia Tech Microelectronics Research Center. Energy Loss and Other Scattering Mechanisms in Tunneling Structures Our group has recently identified key inelastic and non-k-conserving tunneling events that comprise the valley current. We are proceeding with the study of those valley current components with carefully prepared Coulomb and inelastic scattering centers, to identify mechanisms that limit the performance of two and three terminal tunneling and coherent-wave devices. Charging in Quantum Wells We will measure the charge and potential distribution in stable and bistable quantum well devices in order to evaluate their potential as ultra-fast switches, oscillators, and microwave amplifiers. A closely-associated project will separately model and measure the dynamics of astable behavior in the same devices. Electron Wave Optics Device Demonstration Project We will carry out transport and magnetotransport experiments in order to demonstrate and perfect a predicted energy-selective bandpass filter based on electron wave optic principles. These new device ideas emulate optical and microwave device structure but at length scales a thousand times smaller.