An Experimental Study of Inversion Layers at Semiconductor Interfaces: The Fractional Quantum Hall Effect

半导体界面反型层的实验研究：分数量子霍尔效应

• 批准号: 8719694
• 负责人: Daniel Tsui
• 金额: $ 46.68万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-07-15 至 1991-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8719694&HistoricalAwards=false
• 关键词: Experimental; Study; Inversion; Layers; Semiconductor

Their study will be directed on the fractional quantum Hall effect (FQHE). The study concentrates on (1) probing the ground states, (2) detecting quasi-particle excitations, and (3) testing recent theoretical ideas on scaling of the FQHE. They include experiments of (1) measuring shear modulus of the electron fluid, (2) FQHE in higher Landau levels, (3) modifying the ground state, (4) tunneling into the FQH states, (5) shot noise mesurement, and (6) measurement of temperature and rf frequency dependences.

他们的研究方向是分数量子霍尔效应（FQHE）。研究集中在(1)探测基态，(2)探测准粒子激发，(3)测试关于FQHE缩放的最新理论思想。这些实验包括(1)测量电子流体的剪切模量，(2)更高朗道能级下的FQHE，(3)修改基态，(4)隧道进入FQH状态，(5)弹片噪声测量，以及(6)测量温度和射频依赖性。