Novel Phases and Quantum Phase Transitions in Quantum Hall Effect

量子霍尔效应中的新相和量子相变

• 批准号: 9701426
• 负责人: Daniel Tsui
• 金额: $ 48万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-06-01 至 2000-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9701426&HistoricalAwards=false
• 关键词: Novel; Phases; Quantum; Phase; Transitions

9701426 Tsui This research is in the area of semiconductor physics, probing the behavior of electrons forming a 2-D gas in extremely high mobility semiconductor devices. The research is in the area of the Quantum Hall Effect (QHE) and the Fractional Quantum Hall Effect. The PI in recent research has contributed to dicovery of a duality symmetry. The proposed research aims to explore the duality symmetry between the QHE liquid phase and the newly discovered insulating phase. Another topic to be studied is the universal relation between the longitudinal and transverse conductivity in QHE liquid to insulator transition. Another class of transitions is proposed in extremely low mobility samples. %%% This research project experimentally studies the behavior of conduction electrons in state-of-the-art semiconductor devices. It is found that conduction electrons n extremely pure semiconductor samples, when confined to move in a nearly two dimensional planar region, at low temperatures and high transverse magnetic field, behave in unique ways. These previously observed effects are known as the Quantum Hall Effect and the Fractional Quantum Hall Effect. They are basic effects resulting from the laws of quantum mechanics applied to a dense gas of electrons interacting with each other by Coulomb repulsion. New behaviors are expected, described as new phases of the electron gas, and this research is devoted to finding and describing these new behaviors. The understanding gained can be expected to contribute to improvements in microelectronic device technology. ***

9701426 Tsui 这项研究属于半导体物理领域，探讨电子在极高迁移率半导体器件中形成二维气体的行为。 该研究属于量子霍尔效应（QHE）和分数量子霍尔效应领域。 最近研究中的 PI 为发现二元对称性做出了贡献。 本研究旨在探索 QHE 液相和新发现的绝缘相之间的对偶对称性。 另一个要研究的课题是 QHE 液体到绝缘体转变中纵向和横向电导率之间的普遍关系。 在极低迁移率样品中提出了另一类跃迁。 %%% 该研究项目通过实验研究最先进的半导体器件中传导电子的行为。 研究发现，在低温和高横向磁场下，极纯半导体样品中的传导电子在被限制在近二维平面区域中移动时，会以独特的方式表现。 这些先前观察到的效应被称为量子霍尔效应和分数量子霍尔效应。 它们是量子力学定律产生的基本效应，该定律应用于通过库仑斥力相互作用的致密电子气体。 新的行为是预期的，被描述为电子气的新相，这项研究致力于发现和描述这些新行为。 所获得的理解有望有助于微电子器件技术的改进。 ***