RUI: Electromodulation Study of Coupling Between Double andMultiple Quantum Wells

PI将使用电调制以及其他调制方法（如温度调制）对双量子阱和多量子阱之间的耦合进行全面研究。此外，我们计划使用这些耦合效应来更准确地确定这些半导体结构中的带偏移。我们的主要重点将放在GaAs/GaA1As系统上，但如果时间允许，我们将研究其他系统，如应变层InGaAs/GaAs。

The PI will do a comprehensive study of coupling between double and multiple quantum wells using electromodulation as well as other modulation methods such as temperature modulation (thermomodulation). In addition, we plan to use these coupling effects to more accurately determine band offsets in these semiconductor structures. Our main focus will be on the GaAs/GaA1As system although other systems such as strained layer InGaAs/GaAs will be examined if time allows.