RUI: Electromodulation Study of Coupling Between Double andMultiple Quantum Wells

PI将全面研究双重和 使用电调制的多量子威尔斯阱以及其它 调制方法，例如温度调制（热调制）。 此外，我们计划利用这些耦合效应， 确定这些半导体结构中的能带偏移。 我们的主要 重点将放在GaAs/GaA 1As系统上，尽管其他系统， 如果时间允许，将检查应变层InGaAs/GaAs。

The PI will do a comprehensive study of coupling between double and multiple quantum wells using electromodulation as well as other modulation methods such as temperature modulation (thermomodulation). In addition, we plan to use these coupling effects to more accurately determine band offsets in these semiconductor structures. Our main focus will be on the GaAs/GaA1As system although other systems such as strained layer InGaAs/GaAs will be examined if time allows.