Expedited Award for Novel Research: Electromodulation In- vestigation of Semiconductor Superlattices, Quantum Well and Heterojunctions

PI打算研究和表征各种半导体 结构如超晶格、量子威尔斯和异质结， 光反射电调制技术， 电反射率 该英尺。蒙茅斯ETDL设施有一个很好的 MBE生长能力，他们已经在准备这样的结构 特别是GaAl As/GaAs系统和GaAs掺杂超晶格（hipi 结构）。 虽然FT。蒙茅斯有一些技巧， 光致发光、拉曼散射、TEM等来研究这些 半导体系统，它们不具有电调制 光谱学能力 因此，这将是一个非常好的， 及时匹配资源、专门知识和利益。

The PI intends to study and characterize various semiconductor structures such as superlattices, quantum wells and heterojunctions by the electromodulation techniques of photoreflectance and electroreflectance. The Ft. Monmouth ETDL facility has an excellent MBE growth capability and they are already preparing such structures particularly the GaA1As/GaAs system and GaAs doping superlattices (hipi structures). Although Ft. Monmouth has certain techniques such as photoluminescence, Raman scattering, TEM, etc. to study these semiconductor systems they do not have an electromodulation spectroscopy cability. Therefore, this would be an excellent and very timely match-up of resources, expertise and interests.