Halogen Atom Source for Semiconductor Etching

第二阶段SBIR项目提供了开发和 展示了一种可与真空兼容的， 微波放电源的氯和氟原子。 化学 用卤素原子辅助蚀刻半导体材料 结合光子、电子和离子刺激， 研究了 第一阶段项目成功地证明了 先前开发的氟原子源可以被修改， 产生氯原子。

This Phase II SBIR project provides for the development and demonstration of novel applications of an ultrahigh vacuum compatible, microwave discharge source of chlorine and fluorine atoms. Chemically assisted etching of semiconductor materials with halogen atoms in conjunction with photon, electron, and ion stimulation will be investigated. The Phase I project was successful in demonstrating that a previously developed fluorine atom source could be modified so as to produce chlorine atoms.