Research Initiation: GeSi System Based Heterojunction Bipolar and Buried Channel MOS Transistors

研究启动：基于GeSi系统的异质结双极和埋沟道MOS晶体管

• 批准号: 8809376
• 负责人: Jason Woo
• 金额: $ 7万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-01 至 1991-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8809376&HistoricalAwards=false
• 关键词: Research; Initiation; GeSi; System; Based

This project proposes to investigate the physics of rapid thermal processing of GeSi systems and their oxidation mechanisms. Epitaxial regrowth conditions and the resulting junction properties will be investigated. Thermal oxidation and the annealing kinetics to reduce interface states will be examined. Device structures based on these materials will also be studied. These include HJBT for very fast digital and high frequency analog applications, and heterojunction MOSFET's for fast and reliable digital applications. The focus will be on their fabrication and optimization. Device simulators will be employed to explore the device physics involved. This proposed research can potentially lead to new method in achieving high speed VLSI circuits.

该项目旨在研究快速热物理 GeSi系统的处理及其氧化机制。 外延 再生条件和由此产生的结特性将是 研究了 热氧化和退火动力学减少 将检查接口状态。 基于这些的设备结构 材料也将进行研究。 其中包括HJBT非常快 数字和高频模拟应用，以及异质结 MOSFET用于快速可靠的数字应用。 重点将 他们的制造和优化。 设备模拟器将 用于探索所涉及的设备物理。 这一拟议 研究可能会导致新的方法，在实现高速 超大规模集成电路