Research Initiation: GeSi System Based Heterojunction Bipolar and Buried Channel MOS Transistors

本项目旨在研究GeSi体系快速热加工的物理特性及其氧化机理。外延再生条件和由此产生的结性质将被研究。热氧化和退火动力学降低界面状态将被检查。基于这些材料的器件结构也将被研究。其中包括用于快速数字和高频模拟应用的HJBT，以及用于快速可靠数字应用的异质结MOSFET。重点将放在他们的制造和优化。设备模拟器将被用来探索所涉及的设备物理。这项研究可能为实现高速VLSI电路提供新的方法。

This project proposes to investigate the physics of rapid thermal processing of GeSi systems and their oxidation mechanisms. Epitaxial regrowth conditions and the resulting junction properties will be investigated. Thermal oxidation and the annealing kinetics to reduce interface states will be examined. Device structures based on these materials will also be studied. These include HJBT for very fast digital and high frequency analog applications, and heterojunction MOSFET's for fast and reliable digital applications. The focus will be on their fabrication and optimization. Device simulators will be employed to explore the device physics involved. This proposed research can potentially lead to new method in achieving high speed VLSI circuits.