Research Initiation: GeSi System Based Heterojunction Bipolar and Buried Channel MOS Transistors

本项目旨在研究GeSi系统快速热处理的物理过程及其氧化机制。外延再生长条件和由此产生的结特性将被研究。我们将研究热氧化和退火还原界面态的动力学。基于这些材料的器件结构也将被研究。其中包括用于非常快的数字和高频模拟应用的HJBT，以及用于快速和可靠的数字应用的异质结MOSFET。重点将放在它们的制造和优化上。将使用器件模拟器来探索所涉及的器件物理。这项研究可能会为实现高速VLSI电路提供新的方法。

This project proposes to investigate the physics of rapid thermal processing of GeSi systems and their oxidation mechanisms. Epitaxial regrowth conditions and the resulting junction properties will be investigated. Thermal oxidation and the annealing kinetics to reduce interface states will be examined. Device structures based on these materials will also be studied. These include HJBT for very fast digital and high frequency analog applications, and heterojunction MOSFET's for fast and reliable digital applications. The focus will be on their fabrication and optimization. Device simulators will be employed to explore the device physics involved. This proposed research can potentially lead to new method in achieving high speed VLSI circuits.