NER: Silicon Nano Transistors with a QM Tunneling Injection Source

本研究的目的是探索具有栅控量子力学(带到带)隧道注入源的硅纳米晶体管。这种晶体管不会受到传统FET的短沟道(小尺寸)效应的影响，因此非常适合于纳米尺寸的应用。带对带隧道源的优点是关断电流不受扩散的限制，因此Ion/Ioff非常大。它还允许弹道传输，因此导通电流比亚15 nm硅MOSFET大得多。模拟结果表明，这种晶体管的Ion/Ioff比可以达到104倍以上，是传统分米MOSFET的几倍。这一革命性的器件可能开启纳米级硅晶体管的新范式。这项研究的成功将解决ITRS路线图中确定的许多困难，如电压调整、离子关闭限制和离子退化，从而为硅CMOS扩展到10 nm以下的区域提供了一条令人兴奋的道路。这里提出的晶体管是一种革命性的方法，但仍保持了分米级MOSFET的基本风格。因此，它可以使用成熟的cmos技术来实现。如果成功，对半导体行业的影响可能是极其重大的。对于学生来说，这也是一个很好的研究领域。除了研究这些新型晶体管的基本器件物理外，他们还可以深入了解大规模MOSFET的操作，当它们最终为行业工作时，这可能是非常有价值的。为了增加他们的教育经验，将积极招募女性和代表性不足的少数民族学生参加这项研究。

The objective of this research is to explore silicon nano-transistor with gate-controlled quantum mechanical (band-to-band) tunneling injection source. Such transistor will not suffer the short channel (small size) effects of conventional FETs, and therefore very suitable for nano-dimension applications. The advantage of band-to-band tunneling source is that the off current is not limited by diffusion and therefore the Ion/Ioff is extremely large. It also allows ballistic transport and therefore the on-current is much greater than sub-15nm silicon MOSFET. Simulation shows that such transistor can yield an Ion/Ioff better than 104 times and Ion several times achievable by conventional decameter MOSFETs. This revolutionary device can potentially start a new paradigm for nano-scaled silicon transistors.The success of this research will resolve many of the difficulties identified by the ITRS roadmap, such as voltage scaling, Ioff limitation and Ion degradation, allowing an exciting path for silicon CMOS to extend into sub10-nm regime. The transistor proposed here is a revolutionary approach, yet maintain the basic flavor of decameter MOSFETs. It can therefore be implemented using the well developed CMOS technology. If successful, the impact to semiconductor industry can be extremely significant. It is also an excellent research area for students. Besides investigating the fundamental device physics of these novel transistors, they can gain insights into the operation of deeply scaled MOSFETs, which can be extremely valuable when they eventually work for the industry. To increase their education experience, woman and under-represented minority students will be actively recruited for this research.