NER: Silicon Nano Transistors with a QM Tunneling Injection Source

本研究的目的是探索具有门控量子力学（带对带）隧穿注入源的硅纳米晶体管。这种晶体管不会受到传统场效应管的短沟道（小尺寸）影响，因此非常适合纳米级应用。带对带隧道源的优点是关断电流不受扩散的限制，因此离子/关断非常大。它还允许弹道输运，因此导通电流远远大于15纳米以下硅MOSFET。仿真结果表明，该晶体管的离子/离合比优于104倍，而传统的十直径mosfet可以达到数倍的离子/离合比。这种革命性的装置可能会开启纳米级硅晶体管的新范式。这项研究的成功将解决ITRS路线图所确定的许多困难，如电压缩放、断限和离子降解，为硅CMOS扩展到亚10纳米领域提供了一条令人兴奋的道路。这里提出的晶体管是一种革命性的方法，但保持了十米mosfet的基本风格。因此，它可以使用成熟的CMOS技术来实现。如果成功，对半导体行业的影响将是极其重大的。对学生来说，这也是一个很好的研究领域。除了研究这些新型晶体管的基本器件物理外，他们还可以深入了解深度缩放mosfet的操作，这在最终为行业工作时非常有价值。为了增加他们的教育经验，女性和代表性不足的少数民族学生将被积极招募参加这项研究。

The objective of this research is to explore silicon nano-transistor with gate-controlled quantum mechanical (band-to-band) tunneling injection source. Such transistor will not suffer the short channel (small size) effects of conventional FETs, and therefore very suitable for nano-dimension applications. The advantage of band-to-band tunneling source is that the off current is not limited by diffusion and therefore the Ion/Ioff is extremely large. It also allows ballistic transport and therefore the on-current is much greater than sub-15nm silicon MOSFET. Simulation shows that such transistor can yield an Ion/Ioff better than 104 times and Ion several times achievable by conventional decameter MOSFETs. This revolutionary device can potentially start a new paradigm for nano-scaled silicon transistors.The success of this research will resolve many of the difficulties identified by the ITRS roadmap, such as voltage scaling, Ioff limitation and Ion degradation, allowing an exciting path for silicon CMOS to extend into sub10-nm regime. The transistor proposed here is a revolutionary approach, yet maintain the basic flavor of decameter MOSFETs. It can therefore be implemented using the well developed CMOS technology. If successful, the impact to semiconductor industry can be extremely significant. It is also an excellent research area for students. Besides investigating the fundamental device physics of these novel transistors, they can gain insights into the operation of deeply scaled MOSFETs, which can be extremely valuable when they eventually work for the industry. To increase their education experience, woman and under-represented minority students will be actively recruited for this research.