NER: Silicon Nano Transistors with a QM Tunneling Injection Source

NER：具有 QM 隧道注入源的硅纳米晶体管

• 批准号: 0508251
• 负责人: Jason Woo
• 金额: --
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-07-15 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0508251&HistoricalAwards=false
• 关键词: NER; Silicon; Nano; Transistors; QM

The objective of this research is to explore silicon nano-transistor with gate-controlled quantum mechanical (band-to-band) tunneling injection source. Such transistor will not suffer the short channel (small size) effects of conventional FETs, and therefore very suitable for nano-dimension applications. The advantage of band-to-band tunneling source is that the off current is not limited by diffusion and therefore the Ion/Ioff is extremely large. It also allows ballistic transport and therefore the on-current is much greater than sub-15nm silicon MOSFET. Simulation shows that such transistor can yield an Ion/Ioff better than 104 times and Ion several times achievable by conventional decameter MOSFETs. This revolutionary device can potentially start a new paradigm for nano-scaled silicon transistors.The success of this research will resolve many of the difficulties identified by the ITRS roadmap, such as voltage scaling, Ioff limitation and Ion degradation, allowing an exciting path for silicon CMOS to extend into sub10-nm regime. The transistor proposed here is a revolutionary approach, yet maintain the basic flavor of decameter MOSFETs. It can therefore be implemented using the well developed CMOS technology. If successful, the impact to semiconductor industry can be extremely significant. It is also an excellent research area for students. Besides investigating the fundamental device physics of these novel transistors, they can gain insights into the operation of deeply scaled MOSFETs, which can be extremely valuable when they eventually work for the industry. To increase their education experience, woman and under-represented minority students will be actively recruited for this research.

本研究的目的是探索具有闸极控制量子力学（带至带）穿隧注入源的矽奈米电晶体。这种晶体管不会受到传统FET的短沟道（小尺寸）效应的影响，因此非常适合于纳米尺寸的应用。带-带隧穿源的优点是截止电流不受扩散的限制，因此Ion/Ioff非常大。它还允许弹道传输，因此导通电流远大于亚15 nm硅MOSFET。模拟结果表明，这种晶体管可以产生优于104倍的Ion/Ioff和几倍于传统的decomponent MOSFET的Ion。这一革命性的器件有可能为纳米级硅晶体管开创一个新的范例。这项研究的成功将解决ITRS路线图所确定的许多困难，如电压缩放、Ioff限制和Ion退化，为硅CMOS延伸到亚10 nm范围开辟一条令人兴奋的道路。这里提出的晶体管是一种革命性的方法，但仍保持了decomponent MOSFET的基本风格。因此，它可以使用成熟的CMOS技术来实现。如果成功，对半导体行业的影响将是极其重大的。这也是学生的一个很好的研究领域。除了研究这些新型晶体管的基本器件物理特性外，他们还可以深入了解深度缩放的MOSFET的操作，这在他们最终为行业工作时非常有价值。为了增加他们的教育经验，将积极招募妇女和代表性不足的少数民族学生参加这项研究。