Light Scattering Studies of Semiconductor Heterostructure Interfaces

这项研究使用不同的光散射技术来表征半导体异质结构界面，并研究这些界面的物理性质。光学和声学声子的拉曼散射将被用来研究界面的形态。量子阱中电子的光散射将被用来研究界面的基本电学性质，即两种异质结构材料的能带排列。实验工作的重点是了解和改进外延生长过程，特别是新的系统，如应变层超晶格和非晶态多层膜的等离子体增强气相沉积生长。

The research uses different light scattering techniques to characterize semiconductor heterostructure interfaces and to study the physical properties of these interfaces. Raman scattering by optical and acoustic phonons will be used to investigate the interface morphology. Light scattering by electrons in quantum wells will be used to study the fundamental electronic property of the interface, i.e., the lineup of the energy bands of the two heterostructure materials. The experimental effort focuses on understanding and improving epitaxial growth procedures, with special emphasis on novel systems such as strained layer superlattices and amorphous multi layers grown by plasma enhanced vapor deposition.