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Light Scattering Studies of Semiconductor Heterostructure Interfaces

半导体异质结构界面的光散射研究

基本信息

批准号：
9521507
负责人：
Jose Menendez
金额：
$ 29.86万
依托单位：
Arizona State University
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1995
资助国家：
美国
起止时间：
1995-08-15 至 2000-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9521507&HistoricalAwards=false
关键词：
Light Scattering Studies Semiconductor Heterostructure

项目摘要

9521507 Menendez This research aims, using advanced Raman scattering capabilities, to understand details of growth phenomena affecting disorder at GaAs/AlAs superlattice(SL) interfaces, and interface chemistry and physics relationships to III-V SL optoelectronic properties. This approach will be used to study basic chemical and physical processes that produce disorder at heterojunction during growth. In addition, the vibrational and electronic properties of ultrasmall structures and the stresses in semiconductor devices will be further investigated. The project also includes modeling and simulation to predict phonon frequencies in complex materials for comparison and interpretation of experimental results. %%% An advanced laser light scattering with computer simulation has recently been developed and will be used for basic research of chemical and physical properties of ultrasmall structures, and heterojunction interfaces. This project will be important for advances in microelectronics and photonics because progress in the miniaturization of semiconductor devices depends on the availability of material structures whose crystalline and chemical properties can be controlled at the atomic level. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***

小行星9521507 本研究的目的是，利用先进的拉曼散射能力，了解GaAs/AlAs超晶格（SL）界面的生长现象影响无序的细节，和界面化学和物理关系的III-V SL光电性能。这种方法将被用来研究基本的化学和物理过程中产生的异质结生长过程中的障碍。此外，超小型结构的振动和电子特性以及半导体器件中的应力也将得到进一步的研究。该项目还包括建模和模拟，以预测复杂材料中的声子频率，以比较和解释实验结果。一种先进的激光光散射与计算机模拟最近已经开发出来，并将用于超小结构的化学和物理性质的基础研究，异质结界面。该项目将对微电子学和光子学的进步非常重要，因为半导体器件小型化的进展取决于其晶体和化学性质可以在原子水平上控制的材料结构的可用性。此外，该计划的一个重要特点是在一个基本的和技术上重要的领域培养研究生和本科生。***