Light Scattering Studies of Semiconductor Heterostructure Interfaces

本研究旨在利用先进的拉曼散射能力，了解影响GaAs/AlAs超晶格（SL）界面无序的生长现象的细节，以及界面化学和物理与III-V SL光电特性的关系。这种方法将用于研究在生长过程中产生异质结紊乱的基本化学和物理过程。此外，还将进一步研究半导体器件中超小型结构的振动和电子特性以及应力。该项目还包括建模和模拟，以预测复杂材料中的声子频率，以便对实验结果进行比较和解释。最近发展了一种先进的激光散射与计算机模拟，将用于超小型结构和异质结界面的化学和物理性质的基础研究。这个项目对于微电子学和光子学的进步非常重要，因为半导体器件小型化的进展取决于晶体和化学性质可以在原子水平上控制的材料结构的可用性。此外，该计划的一个重要特点是在一个基础和技术上重要的领域培养研究生和本科生。＊＊＊

9521507 Menendez This research aims, using advanced Raman scattering capabilities, to understand details of growth phenomena affecting disorder at GaAs/AlAs superlattice(SL) interfaces, and interface chemistry and physics relationships to III-V SL optoelectronic properties. This approach will be used to study basic chemical and physical processes that produce disorder at heterojunction during growth. In addition, the vibrational and electronic properties of ultrasmall structures and the stresses in semiconductor devices will be further investigated. The project also includes modeling and simulation to predict phonon frequencies in complex materials for comparison and interpretation of experimental results. %%% An advanced laser light scattering with computer simulation has recently been developed and will be used for basic research of chemical and physical properties of ultrasmall structures, and heterojunction interfaces. This project will be important for advances in microelectronics and photonics because progress in the miniaturization of semiconductor devices depends on the availability of material structures whose crystalline and chemical properties can be controlled at the atomic level. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***