Collaborative Research: DMREF: Quasi-Direct Semiconductors
Collaborative Research: DMREF: Quasi-Direct Semiconductors
批准号:
2119583
负责人:
Jose Menendez
金额:
$86.56万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2021
资助国家:
美国
项目状态:
未结题
起止时间:
2021-10-01 至 2025-09-30
中文摘要
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英文摘要
Nontechnical DescriptionThe rapid identification of materials and structures with properties tailored to specific applications is a fundamental aspect of the Materials Genome Initiative. A basic prerequisite for the success of the Initiative is the ability to predict the targeted properties starting from basic information about the atomic composition and configurations in the material. For devices such as solar cells, detectors, light-emitting diodes, and lasers, the key design consideration is the fraction of the incident light energy absorbed at any particular wavelength. This DMREF project focuses on a particular class of materials, dubbed “quasi-direct” semiconductors, for which a satisfactory theory of light absorption does not exist. The project will develop the theoretical tools needed for the calculation of optical absorption in quasi-direct semiconductors and validate the new theoretical methods by carrying out optical experiments in structures optimized for the accurate measurement of the absorption coefficient. More than 200 quasi-direct semiconductors have already been identified in the Materials Project database, and this project will make it possible to incorporate such materials as optical components of future devices. All codes released will be open source to maximize societal impact, and the semiconductor industry will also benefit from the highly trained STEM workforce delivered by the project. A strong educational focus will be placed on undergraduate students by partnering with the Arizona State University (ASU) Sundial Project, which recruits and mentors students who traditionally have limited access to STEM careers. At the University of Texas at Austin (UT Austin), undergraduates will be directly involved in the development of the new codes. Technical DescriptionIn quasi-direct semiconductors, the energy threshold for vibration-assisted light absorption (the so-called indirect gap) is only slightly below the energy threshold for direct light absorption (the direct gap). Because of this proximity, the quantum-mechanical second-order perturbation theory expressions for vibrational-assisted absorption diverge as the photon energy approaches the direct gap, leading to unphysical predictions. The proposed solutions include the development of many-body quasi-degenerate perturbation theory and the use of a non-perturbative special displacement method by the team at UT Austin. The experimental validation requires special samples and materials, since the absorption coefficient must be determined with high accuracy over a spectral range where it changes by orders of magnitude. The needed samples will be fabricated at ASU using custom Chemical Vapor Deposition methods, and the optical measurements will also be performed by the ASU team.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(4)
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Ultra-low temperature synthesis of Ge-based optical materials and devices on Si using GeH 3 Cl
使用GeH 3 Cl在Si上超低温合成Ge基光学材料和器件
DOI:
10.1039/d2tc02862j
发表时间:
2022
期刊:
Journal of Materials Chemistry C
影响因子:
6.4
作者:
[Zhang, Aixin, Mircovich, Matthew A., Ringwala, Dhruve A., Poweleit, Christian D., Roldan, Manuel A., Menéndez, José, Kouvetakis, John]
通讯作者:
Kouvetakis, John
Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge
对载流子浓度进行一致的光学和电学测定,以准确模拟 n 型 Ge 的输运特性
DOI:
10.1016/j.mssp.2023.107596
发表时间:
2023
期刊:
Materials Science in Semiconductor Processing
影响因子:
4.1
作者:
[Menéndez, José, Xu, Chi, Kouvetakis, John]
通讯作者:
Kouvetakis, John
Synthesis of short-wave infrared Ge1− y Sn y semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications
通过超低温分子路线直接在 Si(100) 上合成短波红外 Ge1-y Sn y 半导体,用于单片集成应用
DOI:
10.1116/6.0002052
发表时间:
2022
期刊:
Journal of Vacuum Science & Technology A
影响因子:
2.9
作者:
[Xu, Chi, Hu, Ting, Zhang, Aixin, Ringwala, Dhruve A., Menéndez, José, Kouvetakis, John]
通讯作者:
Kouvetakis, John
Excitonic effects at the temperature-dependent direct bandgap of Ge
Ge 随温度变化的直接带隙的激子效应
DOI:
10.1063/5.0080158
发表时间:
2022
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Emminger, Carola, Samarasingha, Nuwanjula S., Rivero Arias, Melissa, Abadizaman, Farzin, Menéndez, José, Zollner, Stefan]
通讯作者:
Zollner, Stefan
FuSe-TG: Monolithic Heterointegration of GeSn and SiGeSn Alloys with Silicon Platforms
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批准号:2235447
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2023
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负责人:Jose Menendez
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依托单位:
SusChEM: Molecular Routes to New Classes of Polar and Non-Polar Alloy Semiconductors
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批准号:1309090
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项目类别:Standard Grant
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资助金额:$78.81万
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财政年份:2013
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负责人:Jose Menendez
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依托单位:
Sn-Containing Group-IV Semiconductors for Energy Applications in Photovoltaics and Thermoelectricity
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批准号:0907600
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项目类别:Standard Grant
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资助金额:$88.44万
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财政年份:2009
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负责人:Jose Menendez
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依托单位:
NSF-Europe: Electronic Correlations in Carbon Nanotubes
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批准号:0244290
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Jose Menendez
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依托单位:
Development of a Solid Immersion Lens Microscope for Optical Spectroscopy
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批准号:0216601
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项目类别:Standard Grant
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资助金额:$32.92万
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财政年份:2002
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负责人:Jose Menendez
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依托单位:
U.S.- Spain Cooperative Research: Optical Studies of Carbon Nanotubes under High Magnetic Fields
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批准号:0072110
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项目类别:Standard Grant
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资助金额:$1.4万
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财政年份:2000
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负责人:Jose Menendez
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依托单位:
Experimental and Theoretical Investigations of Light Scattering in Fullerenes
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批准号:9624102
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项目类别:Continuing Grant
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资助金额:$9.0万
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财政年份:1996
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负责人:Jose Menendez
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依托单位:
Light Scattering Studies of Semiconductor Heterostructure Interfaces
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批准号:9521507
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项目类别:Continuing Grant
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资助金额:$29.86万
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财政年份:1995
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负责人:Jose Menendez
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依托单位:
Acquisition of Double Monochromator for Ultra-High Resolution Raman Spectroscopy
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批准号:9503904
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项目类别:Standard Grant
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资助金额:$13.0万
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财政年份:1995
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负责人:Jose Menendez
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依托单位:
Light Scattering Studies of Semiconductor Heterostructure Interfaces and Carbon-Based Materials
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批准号:9121567
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项目类别:Continuing Grant
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资助金额:$22.59万
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财政年份:1992
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负责人:Jose Menendez
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依托单位:
Presidential Young Investigator Award
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批准号:9058343
-
项目类别:Continuing Grant
-
资助金额:$23.98万
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财政年份:1990
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负责人:Jose Menendez
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依托单位:
Light Scattering Studies of Semiconductor Heterostructure Interfaces
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批准号:8814918
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项目类别:Continuing Grant
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资助金额:$21.25万
-
财政年份:1989
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负责人:Jose Menendez
-
依托单位:
国内基金
海外基金
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Research on Quantum Field Theory without a Lagrangian Description
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批准号:24ZR1403900
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批准年份:2024
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负责人:SATOSHI NAWATA
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依托单位:
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批准号:31224802
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资助金额:24.0万元
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负责人:程磊
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Cell Research
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批准号:31024804
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资助金额:24.0万元
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批准年份:2010
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依托单位:
Cell Research (细胞研究)
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批准号:30824808
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项目类别:专项基金项目
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资助金额:24.0万元
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批准年份:2008
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负责人:张爱兰
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依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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依托单位: